Presentation | 2012-04-28 Epitaxial Growth of Silicon Films on Porous Silicon Underlayer by Micro-Thermal-Plasma-Jet Irradiation Shohei HAYASHI, Ryohei MATSUBARA, Yuji FUJITA, Mitsuhisa IKEDA, Seiichiro HIGASHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Amorphous silicon (a-Si) film on porous silicon (PS) underlayer were melted and rapid solidification was induced by micro-thermal-plasma-jet irradiation. Because the thermal conduction can be controlled by changing structure, a-Si films on PS formed by the porosity of 42 % and the PS layer thickness of 20.8 μm were easily melted by very high speed of 4000 mm/s. Crystallized Si films show a high crystalline volume fraction of ~100% and lower tensile stress compared to that of Si films crystallized on quartz substrates. In addition, crystallized Si films on PS layer show strong orientation to {100} direction, which suggests liquid phase epitaxial growth from PS layer. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Micro-Thermal-Plasma-Jet / Porous Silicon / Epitaxial Growth |
Paper # | SDM2012-14,OME2012-14 |
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Conference Information | |
Committee | OME |
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Conference Date | 2012/4/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Epitaxial Growth of Silicon Films on Porous Silicon Underlayer by Micro-Thermal-Plasma-Jet Irradiation |
Sub Title (in English) | |
Keyword(1) | Micro-Thermal-Plasma-Jet |
Keyword(2) | Porous Silicon |
Keyword(3) | Epitaxial Growth |
1st Author's Name | Shohei HAYASHI |
1st Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University() |
2nd Author's Name | Ryohei MATSUBARA |
2nd Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
3rd Author's Name | Yuji FUJITA |
3rd Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
4th Author's Name | Mitsuhisa IKEDA |
4th Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
5th Author's Name | Seiichiro HIGASHI |
5th Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
Date | 2012-04-28 |
Paper # | SDM2012-14,OME2012-14 |
Volume (vol) | vol.112 |
Number (no) | 19 |
Page | pp.pp.- |
#Pages | 4 |
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