Presentation 2012-04-28
Epitaxial Growth of Silicon Films on Porous Silicon Underlayer by Micro-Thermal-Plasma-Jet Irradiation
Shohei HAYASHI, Ryohei MATSUBARA, Yuji FUJITA, Mitsuhisa IKEDA, Seiichiro HIGASHI,
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Abstract(in English) Amorphous silicon (a-Si) film on porous silicon (PS) underlayer were melted and rapid solidification was induced by micro-thermal-plasma-jet irradiation. Because the thermal conduction can be controlled by changing structure, a-Si films on PS formed by the porosity of 42 % and the PS layer thickness of 20.8 μm were easily melted by very high speed of 4000 mm/s. Crystallized Si films show a high crystalline volume fraction of ~100% and lower tensile stress compared to that of Si films crystallized on quartz substrates. In addition, crystallized Si films on PS layer show strong orientation to {100} direction, which suggests liquid phase epitaxial growth from PS layer.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Micro-Thermal-Plasma-Jet / Porous Silicon / Epitaxial Growth
Paper # SDM2012-14,OME2012-14
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Committee OME
Conference Date 2012/4/20(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Epitaxial Growth of Silicon Films on Porous Silicon Underlayer by Micro-Thermal-Plasma-Jet Irradiation
Sub Title (in English)
Keyword(1) Micro-Thermal-Plasma-Jet
Keyword(2) Porous Silicon
Keyword(3) Epitaxial Growth
1st Author's Name Shohei HAYASHI
1st Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University()
2nd Author's Name Ryohei MATSUBARA
2nd Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University
3rd Author's Name Yuji FUJITA
3rd Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University
4th Author's Name Mitsuhisa IKEDA
4th Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University
5th Author's Name Seiichiro HIGASHI
5th Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University
Date 2012-04-28
Paper # SDM2012-14,OME2012-14
Volume (vol) vol.112
Number (no) 19
Page pp.pp.-
#Pages 4
Date of Issue