Presentation 2012-04-27
Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT
Shin-Ichiro Kuroki,
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Abstract(in English) Poly-Si thin films with large crystal grains of 20×2μm^2 were fabricated by continuous-wave laser lateral crystallization with Gaussian laser spot, and its high-performance TFT was also fabricated. Strain effects on the electron mobility were investigated with double-gate TFTs and tri-gate TFTs. Highly bi-axially oriented poly-Si thin films with very long grains were successfully fabricated on quartz substrates by double-line beam continuous wave laser crystallization. The newly-developed technique achieved highly-oriented silicon grains having {110}, {111} and {211} crystal orientations in the laser lateral crystallized plane, the transverse side plane and the surface plane, respectively. All the silicon grains were elongated in the laser-scanning direction and linearly arranged with a length of over 100 μm and a width of 0.7 μm. TFTs with this well-crystal oriented poly-Si thin films were also fabricated.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Laser crystallization / CLC / Poly-Si / Thin Film Transistor
Paper # SDM2012-6,OME2012-6
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Conference Information
Committee SDM
Conference Date 2012/4/20(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT
Sub Title (in English)
Keyword(1) Laser crystallization
Keyword(2) CLC
Keyword(3) Poly-Si
Keyword(4) Thin Film Transistor
1st Author's Name Shin-Ichiro Kuroki
1st Author's Affiliation Graduate School of Engineering, Tohoku University:(Present office)Research Institute for Nanodevice and Bio Systems (RNBS)()
Date 2012-04-27
Paper # SDM2012-6,OME2012-6
Volume (vol) vol.112
Number (no) 18
Page pp.pp.-
#Pages 6
Date of Issue