Presentation 2012-04-19
Effects of interfacial oxide layer of P3HT/n-Si organic/inorganic heterojunction diode on carrier transport properties
Naoki OYAMA, Sho KANEKO, Kensaku KANOMATA, Fumihiko HIROSE,
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Abstract(in English) Current density-voltage (J-V) characteristics of P3HT/n-silicon heterojunction were investigated to evaluate electrical characteristics of the organic/inorganic heteroj unction diodes. The diodes were fabricated by P3HT spin coating processes with surface treatments of SiC and HF treatments. The forward current density was enhanced by the treatments. The thicknesses of oxide layer between the P3HT film and the n-Si substrate strongly depends on the treatments. Effects of interfacial oxide layer of these heteroj unction diodes on carrier transport properties were discussed with Card model.
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Keyword(in English) flexible device / heterojunction / Schottky diode / poly(3-hexylthiophene)
Paper # ED2012-14
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Committee ED
Conference Date 2012/4/11(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effects of interfacial oxide layer of P3HT/n-Si organic/inorganic heterojunction diode on carrier transport properties
Sub Title (in English)
Keyword(1) flexible device
Keyword(2) heterojunction
Keyword(3) Schottky diode
Keyword(4) poly(3-hexylthiophene)
1st Author's Name Naoki OYAMA
1st Author's Affiliation Graduated School of Science and Engineering, Yamagata University()
2nd Author's Name Sho KANEKO
2nd Author's Affiliation Graduated School of Science and Engineering, Yamagata University
3rd Author's Name Kensaku KANOMATA
3rd Author's Affiliation Graduated School of Science and Engineering, Yamagata University
4th Author's Name Fumihiko HIROSE
4th Author's Affiliation Graduated School of Science and Engineering, Yamagata University
Date 2012-04-19
Paper # ED2012-14
Volume (vol) vol.112
Number (no) 5
Page pp.pp.-
#Pages 6
Date of Issue