| Presentation | 2012-03-05 Influence of Via Stress on Surface Micro-roughness-induced Leakage Current in Through-Silicon Via Interconnects Hideki KITADA, Nobuhide MAEDA, Koji FUJIMOTO, Shoichi KODAMA, Youngsuk KIM, Yoriko MIZUSHIMA, Tomoji NAKAMURA, Takayuki OHBA, Yoshihiro NAKATA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We studied the leakage current due to surface roughness at the sidewalls of Cu through-silicon vias (TSVs). Openings for TSVs were formed using the Bosch and non-Bosch (direct etching) processes, and SiON was formed by low-temperature plasma chemical deposition. Since the Bosch process involves repeated etching and deposition, micro-steps, so-called scalloping, were formed along the sidewalls of the TSV. The leakage current for the Bosch TSV was ten times higher than that of a non-Bosch TSV. Micro cracks across the SiON layer at the micro-steps were observed by TEM analysis, and stress concentration sequentially occurred, as predicted by the finite element method. This suggests that direct etching together with the non-Bosch process is feasible for fabricating reliable TSV interconnects, and the repeated etching/deposition cycle time for Bosch process must be shortened. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 3D-IC / TSV / LT-PECVD / FEM / diffusion barrier / TEM / stress |
| Paper # | SDM2011-183 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2012/2/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Influence of Via Stress on Surface Micro-roughness-induced Leakage Current in Through-Silicon Via Interconnects |
| Sub Title (in English) | |
| Keyword(1) | 3D-IC |
| Keyword(2) | TSV |
| Keyword(3) | LT-PECVD |
| Keyword(4) | FEM |
| Keyword(5) | diffusion barrier |
| Keyword(6) | TEM |
| Keyword(7) | stress |
| 1st Author's Name | Hideki KITADA |
| 1st Author's Affiliation | The University of Tokyo() |
| 2nd Author's Name | Nobuhide MAEDA |
| 2nd Author's Affiliation | The University of Tokyo |
| 3rd Author's Name | Koji FUJIMOTO |
| 3rd Author's Affiliation | Dai Nippon Printing Co. Ltd. |
| 4th Author's Name | Shoichi KODAMA |
| 4th Author's Affiliation | The University of Tokyo |
| 5th Author's Name | Youngsuk KIM |
| 5th Author's Affiliation | The University of Tokyo |
| 6th Author's Name | Yoriko MIZUSHIMA |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 7th Author's Name | Tomoji NAKAMURA |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 8th Author's Name | Takayuki OHBA |
| 8th Author's Affiliation | The University of Tokyo |
| 9th Author's Name | Yoshihiro NAKATA |
| 9th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 2012-03-05 |
| Paper # | SDM2011-183 |
| Volume (vol) | vol.111 |
| Number (no) | 463 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |