Presentation 2012-03-06
Implementation of Tamper-Resistant Cryptographic DES Circuit using Dual-Rail RSL Memory
Megumi SHIBATANI, Katsuhiko IWAI, Mitsuru SHIOZAKI, Shunsuke ASAGAWA, Takeshi FUJINO,
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Abstract(in English) Recently, it has been pointed out that Differential Power Analysis (DPA), one of the Side-Channel Attack techniques, is a threat to cryptographic circuits which handle confidential information. Therefore, a LSI design with DPA resistance is required and many techniques are proposed. As a technique against DPA, we have proposed a Dual-Rail RSL Memory system, which occupies small chip area and has low power consumption. Using our technique on the cryptographic circuit, we can achieve DPA resistance. On the linear circuit, the correlation between power consumption and the circuit operation is eliminated by the random masking method, and on the nonlinear circuit the power consumption is uniformized by balancing on a memory circuit that performs a dual-rail complementary operation. The Dual-Rail RSL memory method, which had been applied to an AES circuit, is newly applied to DES circuit. The peripheral circuits such as decoders and sense amplifiers are improved to flexible layout so that SBoxes with various input-and-output bits can be customized. Furthermore, DES circuit using the Dual-Rail RSL memories as SBoxes is designed using 0.18μm CMOS process. In this paper we will introduce our approach mentioned above, and report the evaluated results of chip area and DPA resistance.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Side-Channel Attack / DPA / AES / DES / Dual-Rail RSL Memory
Paper # VLD2011-125
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Conference Information
Committee VLD
Conference Date 2012/2/28(1days)
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Paper Information
Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Implementation of Tamper-Resistant Cryptographic DES Circuit using Dual-Rail RSL Memory
Sub Title (in English)
Keyword(1) Side-Channel Attack
Keyword(2) DPA
Keyword(3) AES
Keyword(4) DES
Keyword(5) Dual-Rail RSL Memory
1st Author's Name Megumi SHIBATANI
1st Author's Affiliation Department of Science and Engineering, Ritsumeikan University()
2nd Author's Name Katsuhiko IWAI
2nd Author's Affiliation Graduate School of Science and Technology, Ritsumeikan University
3rd Author's Name Mitsuru SHIOZAKI
3rd Author's Affiliation Research Organization of Science and Engineering, Ritsumeikan University
4th Author's Name Shunsuke ASAGAWA
4th Author's Affiliation Department of Science and Engineering, Ritsumeikan University
5th Author's Name Takeshi FUJINO
5th Author's Affiliation Department of Science and Engineering, Ritsumeikan University
Date 2012-03-06
Paper # VLD2011-125
Volume (vol) vol.111
Number (no) 450
Page pp.pp.-
#Pages 6
Date of Issue