| Presentation | 2012-03-02 Ultrafast All-Optical Switches using Multilayer Cavity with Er-Doped InAs Quantum Dots Embeded in Strain-Relaxed Barriers Ken MORITA, Hyuga UEYAMA, Takahiro KITADA, Toshiro ISU, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this work, time-resolved optical measurements of GaAs/AlAs multilayer cavities with the Er-doped InAs quantum dots (QDs) embedded in strain-relaxed InGaAs barriers were investigated for ultrafast all-optical switches. The nonlinear signal due to the absorption saturation in the 20-layer stack of the Er-doped QDs became large by increasing In composition in the strain-relaxed InGaAs barriers while keeping the extremely short decay time. The QD-cavity structures consisting of two GaAs/AlAs distributed Bragg reflector (DBR) multilayers and a half-wavelength cavity layer containing two layers of the Er-doped QDs were grown by molecular beam epitaxy. The transmission change signal was clearly observed in the time-resolved measurements at the cavity mode wavelength of 1.55μm. The response time of the Er-doped QD-cavity was 4ps, which was much shorter than that (12ps) of the undoped QD-cavity. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | All optical switch / Optical microcavity / III-V semiconductors / Er-doped Quantum dots |
| Paper # | OFT2011-79,OPE2011-205 |
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| Conference Information | |
| Committee | OFT |
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| Conference Date | 2012/2/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Optical Fiber Technology (OFT) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ultrafast All-Optical Switches using Multilayer Cavity with Er-Doped InAs Quantum Dots Embeded in Strain-Relaxed Barriers |
| Sub Title (in English) | |
| Keyword(1) | All optical switch |
| Keyword(2) | Optical microcavity |
| Keyword(3) | III-V semiconductors |
| Keyword(4) | Er-doped Quantum dots |
| 1st Author's Name | Ken MORITA |
| 1st Author's Affiliation | Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima() |
| 2nd Author's Name | Hyuga UEYAMA |
| 2nd Author's Affiliation | Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima |
| 3rd Author's Name | Takahiro KITADA |
| 3rd Author's Affiliation | Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima |
| 4th Author's Name | Toshiro ISU |
| 4th Author's Affiliation | Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima |
| Date | 2012-03-02 |
| Paper # | OFT2011-79,OPE2011-205 |
| Volume (vol) | vol.111 |
| Number (no) | 448 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |