Presentation 2012-01-26
Storage capacity of the associative memory model with the zero-order synaptic decay
Ryota MIYATA, Jun TSUZURUGI, Toru AONISHI, Koji KURATA,
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Abstract(in English) It has been reported that synaptogenesis, formation of synaptic connection, continues to take place in certain regions of the postnatal brain including the hippocampal regions. According to the previous neurophysiological experiment, synapses with smaller strength tend to be eliminated with higher probability. We investigate the effect of synaptogenesis on memories in the neural circuit, proposing the abstract neural network model, the Hopfield model with the zero-order synaptic decay. Using the numerical simulations, we demonstrate the possibility that synaptogenesis plays a role in maintaining recent memories embedded in the network while avoiding overloading. We also show the storage capacity of the zero-order decay model as a function of the decay rate a which corresponds to the number of replacement synapses. Furthermore, we extend the zero-order decay model to β-th-order, and investigate its characteristics by varying the order of the decay term, β. The results show that the characteristics of the β-th-order decay model are constant for a large order β.
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Keyword(in English) synaptogenesis / zero-order synaptic decay / associative memory / Hopfield model / forgetting process / β-th-order synaptic decay / overloading / storage capacity
Paper # NC2011-97
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Committee NC
Conference Date 2012/1/19(1days)
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Registration To Neurocomputing (NC)
Language JPN
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Title (in English) Storage capacity of the associative memory model with the zero-order synaptic decay
Sub Title (in English)
Keyword(1) synaptogenesis
Keyword(2) zero-order synaptic decay
Keyword(3) associative memory
Keyword(4) Hopfield model
Keyword(5) forgetting process
Keyword(6) β-th-order synaptic decay
Keyword(7) overloading
Keyword(8) storage capacity
1st Author's Name Ryota MIYATA
1st Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology()
2nd Author's Name Jun TSUZURUGI
2nd Author's Affiliation Faculty of Engineering, Okayama University of Science
3rd Author's Name Toru AONISHI
3rd Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
4th Author's Name Koji KURATA
4th Author's Affiliation Faculty of Engineering, University of the Ryukyus
Date 2012-01-26
Paper # NC2011-97
Volume (vol) vol.111
Number (no) 419
Page pp.pp.-
#Pages 6
Date of Issue