| Presentation | 2012-02-08 Charge distribution near interface of high-k gate insulator in CNFETs Kosuke SUZUKI, Yutaka OHNO, Shigeru KISHIMOTO, Takashi MIZUTANI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated the interface charges generated at the interfaces of the gate insulator in carbon nanotube field-effect transistors (CNFETs) by Kelvin probe force microscopy. It has been found that positive charges are concentrated near the interfaces of the gate insulator with Au electrodes and with a SiO_2 substrate. We have also studied the effect of the positive interface charges on the property of CNFETs, using the device simulation. It has been revealed that the charges at the interface of the gate insulator with the Au electrodes is responsible for the change in the polarity of conduction carriers of CNFETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | carbon nanotube / ALD / high-k / gate insulator / interface |
| Paper # | ED2011-156,SDM2011-173 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2012/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Charge distribution near interface of high-k gate insulator in CNFETs |
| Sub Title (in English) | |
| Keyword(1) | carbon nanotube |
| Keyword(2) | ALD |
| Keyword(3) | high-k |
| Keyword(4) | gate insulator |
| Keyword(5) | interface |
| 1st Author's Name | Kosuke SUZUKI |
| 1st Author's Affiliation | Department of Quantum Engineering, Nagoya University() |
| 2nd Author's Name | Yutaka OHNO |
| 2nd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 3rd Author's Name | Shigeru KISHIMOTO |
| 3rd Author's Affiliation | Department of Quantum Engineering, Nagoya University:Venture Business Laboratory, Nagoya University |
| 4th Author's Name | Takashi MIZUTANI |
| 4th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| Date | 2012-02-08 |
| Paper # | ED2011-156,SDM2011-173 |
| Volume (vol) | vol.111 |
| Number (no) | 426 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |