| Presentation | 2012-02-08 Seebeck Coefficient of Ultrathin Si with Fermi Energy Controlled by External Bias Faiz SALLEH, Kazutoshi MIWA, Hiroya IKEDA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We varied the Seebeck coefficient of an n-type silicon-on-insulator(SOI) sample by applying an external bias in order to control the Fermi energy of the SOI layer without the formation of imputiy band. The Seebeck coefficient became increasingly negative with increasing positive external bias. This result qualitatively agrees with the characteristic of P-doped SOI layers because the positive bias reduces the Fermi energy of the SOI at the SOI/buried-oxide interface and reduces the electron concentration. Consequently, the Fermi energy can be controlled by controlling the external bias, which modifies the Seebeck coefficient of the SOI sample. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Seebeck coefficient / nanostructure / impurity-band formation / Fermi energy |
| Paper # | ED2011-153,SDM2011-170 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2012/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Seebeck Coefficient of Ultrathin Si with Fermi Energy Controlled by External Bias |
| Sub Title (in English) | |
| Keyword(1) | Seebeck coefficient |
| Keyword(2) | nanostructure |
| Keyword(3) | impurity-band formation |
| Keyword(4) | Fermi energy |
| 1st Author's Name | Faiz SALLEH |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University:Japan Society for the Promotion of Science() |
| 2nd Author's Name | Kazutoshi MIWA |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | Hiroya IKEDA |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2012-02-08 |
| Paper # | ED2011-153,SDM2011-170 |
| Volume (vol) | vol.111 |
| Number (no) | 426 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |