| Presentation | 2012-02-08 Observation of Conductance Quantization during SPM Scratching Ryutaro SUDA, Takahiro OHYAMA, Jun-ichi SHIRAKASHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Quantum point contacts(QPCs) are formed by mechanically scratching Au channels with a scanning Probe microscope (SPM) in ambient condition. A variation of electrical properties of the Au channels was caused by a direct modification of the channels using SPM scratching and were in-situ controlled by measuring the conductance across the scratched regime. Such measurement provides a more accurate method of controlling device properties than by controlling geometry alone. The initial Au channels with width of a few micrometers were fabricated by conventional electron-beam lithography and lift-off process. Scratch experiments were carried out using a diamond-coated tip in ambient air. Then, the SPM scratching was performed across the Au channels. The electrical properties of the Au channels were measured in-situ during the SPM scratching. The conductance of the Au channel was slowly decreased with the increase of process time as the channel was constricted by the scratching. The conductance changed in quantized steps of the conductance quantum,G_0=2e^2/h at final stage of the SPM scratching. This result suggests that atomic-size contact is formed by SPM scratching. Furthermore, the conductance varies stepwise with time and exhibits clear plateaus by tuning the scan speed of the SPM tip. These results imply that SPM scratch nanolithography is promising for the fabrication of nanoscale devices consisting of QPCs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | scanning probe microscopy / scratch / in-situ measurement / quantum point contact / conductance quantization |
| Paper # | ED2011-150,SDM2011-167 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2012/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Observation of Conductance Quantization during SPM Scratching |
| Sub Title (in English) | |
| Keyword(1) | scanning probe microscopy |
| Keyword(2) | scratch |
| Keyword(3) | in-situ measurement |
| Keyword(4) | quantum point contact |
| Keyword(5) | conductance quantization |
| 1st Author's Name | Ryutaro SUDA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology() |
| 2nd Author's Name | Takahiro OHYAMA |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology |
| 3rd Author's Name | Jun-ichi SHIRAKASHI |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology |
| Date | 2012-02-08 |
| Paper # | ED2011-150,SDM2011-167 |
| Volume (vol) | vol.111 |
| Number (no) | 426 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |