| Presentation | 2012-02-07 High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation Hiroto TAKENAKA, Michito SHINOHARA, Takafumi UCHIDA, Masashi ARITA, Akira FUJIWARA, Yasuo TAKAHASHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been investigated. It is well known that when alternating current voltage is applied to drain terminal of SET, rectifying of the voltage occurs according as the gate voltage due to the asymmetry of Coulomb diamond. By the use of the effect, we evaluated the high-frequency properties of Si SETs by applying high-frequency alternating-current voltage to the drain terminal. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | single-electron / Coulomb-diamond / high-frequency / rectifying-effect |
| Paper # | ED2011-145,SDM2011-162 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2012/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation |
| Sub Title (in English) | |
| Keyword(1) | single-electron |
| Keyword(2) | Coulomb-diamond |
| Keyword(3) | high-frequency |
| Keyword(4) | rectifying-effect |
| 1st Author's Name | Hiroto TAKENAKA |
| 1st Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ.() |
| 2nd Author's Name | Michito SHINOHARA |
| 2nd Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ. |
| 3rd Author's Name | Takafumi UCHIDA |
| 3rd Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ. |
| 4th Author's Name | Masashi ARITA |
| 4th Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ. |
| 5th Author's Name | Akira FUJIWARA |
| 5th Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
| 6th Author's Name | Yasuo TAKAHASHI |
| 6th Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido Univ. |
| Date | 2012-02-07 |
| Paper # | ED2011-145,SDM2011-162 |
| Volume (vol) | vol.111 |
| Number (no) | 426 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |