Presentation 2012-02-07
Ab initio Analysis of Electronic States for Single Phosphorous Dopants in Silicon Nanoscale Transistors
Yohei KUZUYA, Daniel MORARUI, Takeshi MIZUNO, Michiharu TABE, Hiroshi MIZUTA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Dopant-induced fluctuation of MOSFET characteristics along with device miniaturization has been recognized as a serious problem for further development of Si technology. We study this issue from a different viewpoint and try to develop novel devices which utilize individual dopant atoms as quantum dots. In this regard, it is important to investigate electronic states of dopant in Si nano structures. We performed first-principle simulation of electronic states for phosphorus donors in a Si nano-channel. In this paper, we report on phosphorus donor levels, ionization energy and spatial distribution of electronic states in Si nano channels.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Ab initio / ionization energy / spatial distribution of electronic / nano / MOSFET
Paper # ED2011-143,SDM2011-160
Date of Issue

Conference Information
Committee SDM
Conference Date 2012/1/31(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Ab initio Analysis of Electronic States for Single Phosphorous Dopants in Silicon Nanoscale Transistors
Sub Title (in English)
Keyword(1) Ab initio
Keyword(2) ionization energy
Keyword(3) spatial distribution of electronic
Keyword(4) nano
Keyword(5) MOSFET
1st Author's Name Yohei KUZUYA
1st Author's Affiliation Shizuoka University()
2nd Author's Name Daniel MORARUI
2nd Author's Affiliation Shizuoka University
3rd Author's Name Takeshi MIZUNO
3rd Author's Affiliation Shizuoka University
4th Author's Name Michiharu TABE
4th Author's Affiliation Shizuoka University
5th Author's Name Hiroshi MIZUTA
5th Author's Affiliation Japan Advanced Instituted of Science and Technology:University of Southampton University
Date 2012-02-07
Paper # ED2011-143,SDM2011-160
Volume (vol) vol.111
Number (no) 426
Page pp.pp.-
#Pages 5
Date of Issue