Presentation 2012-02-07
Deterministic-doped Silicon Devices and Their Quantum Transport
Takahiro SHINADA, Masahiro HORI, Filipo GUAGLIARDO, Yukinori ONO, Kuninori KUMAGAI, Takashi TANII, Enrico PRATI,
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Abstract(in English) Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D^0 and D^- states; Hubbard band formation due to the inter-donor coupling. Our deterministic doping method is more effective and reliable for single-dopant transistor development and paves the way towards single atom electronics for extended CMOS applications.
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Keyword(in English) Deterministic doping / Single-ion implantation / Ordered dopant array
Paper # ED2011-142,SDM2011-159
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Committee SDM
Conference Date 2012/1/31(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Deterministic-doped Silicon Devices and Their Quantum Transport
Sub Title (in English)
Keyword(1) Deterministic doping
Keyword(2) Single-ion implantation
Keyword(3) Ordered dopant array
1st Author's Name Takahiro SHINADA
1st Author's Affiliation Waseda Institute for Advanced Study, Waseda University()
2nd Author's Name Masahiro HORI
2nd Author's Affiliation Graduate School of Science and Engineering, Waseda University
3rd Author's Name Filipo GUAGLIARDO
3rd Author's Affiliation Politecnico di Milano
4th Author's Name Yukinori ONO
4th Author's Affiliation NTT Basic Research Laboratories
5th Author's Name Kuninori KUMAGAI
5th Author's Affiliation Graduate School of Science and Engineering, Waseda University
6th Author's Name Takashi TANII
6th Author's Affiliation Graduate School of Science and Engineering, Waseda University
7th Author's Name Enrico PRATI
7th Author's Affiliation Laboratorio MDM, IMM, Consiglio Nazionale delle Ricerche(CNR)
Date 2012-02-07
Paper # ED2011-142,SDM2011-159
Volume (vol) vol.111
Number (no) 426
Page pp.pp.-
#Pages 5
Date of Issue