Presentation 2012-02-08
Electrical characteristics of MgF_2/Fe/MgF_2 thin films
Takuma ISHIKAWA, Eita SATO, Kouichi HAMADA, Masashi ARITA, Yasuo TAKAHASHI,
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Abstract(in English) On carefully prepared SiO_2/Si substrates, MgF_2/Fe-nanodots/MgF_2 granular films were prepared, and fundamental electric properties were measured. The conduction type of the films was tunneling when the Fe thickness was less than ca. 5 nm (the percolation thickness). The size of Fe-nanodot was roughly estimated as 3-5 nm. Tunneling magnetoresistance (TMR) ratios of 8.6% (@RT) and 15.0% (@4.6K) were realized in the sample having thickness of about 2 nm. The TMR ratio was increased by increasing the bias voltage, and it decreased by further increment of voltage. Though the details are obscure, influence by single electron conduction is expected.
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Keyword(in English) Tunneling magnetoresistance / Nanodot / Ferromagnetics
Paper # ED2011-152,SDM2011-169
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Committee ED
Conference Date 2012/1/31(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electrical characteristics of MgF_2/Fe/MgF_2 thin films
Sub Title (in English)
Keyword(1) Tunneling magnetoresistance
Keyword(2) Nanodot
Keyword(3) Ferromagnetics
1st Author's Name Takuma ISHIKAWA
1st Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University()
2nd Author's Name Eita SATO
2nd Author's Affiliation School of Engineering Hokkaido University
3rd Author's Name Kouichi HAMADA
3rd Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University
4th Author's Name Masashi ARITA
4th Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University
5th Author's Name Yasuo TAKAHASHI
5th Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University
Date 2012-02-08
Paper # ED2011-152,SDM2011-169
Volume (vol) vol.111
Number (no) 425
Page pp.pp.-
#Pages 6
Date of Issue