Presentation | 2012-02-13 An approach for adaptive determination of IDDQ testing criteria based on process parameter estimation Michihiro SHINTANI, Takashi SATO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Miniaturization of LSI dimension causes parametric faults, in which fabricated chip does not satisfy its performance specification due to process variations. Under large process variations, leakage current should be tested thoroughly in addition to widely conducted delay fault testing. In this paper, we propose an approach that adaptively determines threshold current for IDDQ testing. In our method, process condition of a chip is first estimated using measured IDDQ currents. Then, upper bound of leakage current of the chip is estimated based on the estimated process condition. If an IDDQ current of the chip exceeds the bound, the chip is classified as fail. Through simulation experiments, we show effectiveness and challenges of the proposed threshold determination method. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | IDDQ Testing / Statistical Leakage Current Analysis / Process Parameter Estimation / Bayes' Theorem |
Paper # | DC2011-84 |
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Committee | DC |
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Conference Date | 2012/2/6(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Dependable Computing (DC) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | An approach for adaptive determination of IDDQ testing criteria based on process parameter estimation |
Sub Title (in English) | |
Keyword(1) | IDDQ Testing |
Keyword(2) | Statistical Leakage Current Analysis |
Keyword(3) | Process Parameter Estimation |
Keyword(4) | Bayes' Theorem |
1st Author's Name | Michihiro SHINTANI |
1st Author's Affiliation | Graduate School of Informatics, Kyoto University() |
2nd Author's Name | Takashi SATO |
2nd Author's Affiliation | Graduate School of Informatics, Kyoto University |
Date | 2012-02-13 |
Paper # | DC2011-84 |
Volume (vol) | vol.111 |
Number (no) | 435 |
Page | pp.pp.- |
#Pages | 6 |
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