| Presentation | 2012-01-12 Effect of surface treatments on insulated gates fabricated on GaN and AlGaN/GaN structures Yujin HORI, Sungsik KIM, Tamotsu HASHIZUME, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have tried to characterize and control the electronic states of Al_2O_3/GaN and Al_2O_3/AlGaN/GaN structures prepared by atomic layer deposition (ALD). In order to control the state densities, an N_2O-radical treatment was applied the the GaN and AlGaN surfaces prior to the deposition of Al_2O_3. We observed good C-V behavior and a relatively low density of interface states for the N_2O-radical treated Al_2O_3/GaN structure. To estimate the state density distributions at the Al_2O_3/AlGaN interface, we carried out the photo-assisted C-V measurement of Al_2O_3/AlGaN/GaN structures. The smaller threshold voltage shift due to the photo-assisted electron emission indicated that the present N_2O-radical treatment is also effective in reducing the Al_2O_3/AlGaN interface states. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Windows / Word / Technical Report / Template |
| Paper # | ED2011-136,MW2011-159 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2012/1/4(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of surface treatments on insulated gates fabricated on GaN and AlGaN/GaN structures |
| Sub Title (in English) | |
| Keyword(1) | Windows |
| Keyword(2) | Word |
| Keyword(3) | Technical Report |
| Keyword(4) | Template |
| 1st Author's Name | Yujin HORI |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Sungsik KIM |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Tamotsu HASHIZUME |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University:JST-CREST |
| Date | 2012-01-12 |
| Paper # | ED2011-136,MW2011-159 |
| Volume (vol) | vol.111 |
| Number (no) | 374 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |