| Presentation | 2012-01-26 AlGaInAs DFB-LD with Ru-doped InP buried Hetero-structure for 25.8Gbps direct modulation Y. Hokama, G. Sakaino, T. Takiguchi, T. Nagira, H. Yamaguchi, M. Suzuki, E. Ishimura, A. Sugitatsu, T. Shimura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We developed 1.3μm AlGaInAs DFB-LD with Ru-doped InP buried Hetero-structure. In this work, we got enough power and large mask-margin of 100GBASE-LR4 which is one of 100Gb Ethernet standard in 60℃ which is 10℃ higher than by DFB-LD with Fe-doped InP buried Hetero-structure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | PN2011-47,OPE2011-163,LQE2011-149,EST2011-97,MWP2011-65 |
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| Conference Information | |
| Committee | EST |
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| Conference Date | 2012/1/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electronic Simulation Technology (EST) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaInAs DFB-LD with Ru-doped InP buried Hetero-structure for 25.8Gbps direct modulation |
| Sub Title (in English) | |
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| 1st Author's Name | Y. Hokama |
| 1st Author's Affiliation | High Frequency & Optical Device Works Mitsubishi Electric Corporation() |
| 2nd Author's Name | G. Sakaino |
| 2nd Author's Affiliation | High Frequency & Optical Device Works Mitsubishi Electric Corporation |
| 3rd Author's Name | T. Takiguchi |
| 3rd Author's Affiliation | High Frequency & Optical Device Works Mitsubishi Electric Corporation |
| 4th Author's Name | T. Nagira |
| 4th Author's Affiliation | High Frequency & Optical Device Works Mitsubishi Electric Corporation |
| 5th Author's Name | H. Yamaguchi |
| 5th Author's Affiliation | High Frequency & Optical Device Works Mitsubishi Electric Corporation |
| 6th Author's Name | M. Suzuki |
| 6th Author's Affiliation | High Frequency & Optical Device Works Mitsubishi Electric Corporation |
| 7th Author's Name | E. Ishimura |
| 7th Author's Affiliation | High Frequency & Optical Device Works Mitsubishi Electric Corporation |
| 8th Author's Name | A. Sugitatsu |
| 8th Author's Affiliation | High Frequency & Optical Device Works Mitsubishi Electric Corporation |
| 9th Author's Name | T. Shimura |
| 9th Author's Affiliation | High Frequency & Optical Device Works Mitsubishi Electric Corporation |
| Date | 2012-01-26 |
| Paper # | PN2011-47,OPE2011-163,LQE2011-149,EST2011-97,MWP2011-65 |
| Volume (vol) | vol.111 |
| Number (no) | 415 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |