Presentation | 2012-01-26 Homodyne Deteciton of Terahertz waves Using Low-Temperature-Grown GaAs at 1.5μm Genki KITAHARA, Shintaro HISATAKE, Katsuhiro AJITO, Naoya KUKUTSU, Ho-Jin SONG, Tadao NAGATSUMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Recently, frequency-domain techniques based on a continuous terahertz wave technology have extensively studied because it provides a higher signal-to-noise ratio and resolution in spectroscopic applications. Previous frequency-domain spectroscopic systems employ an InGaAs exited by 1.5μm or a low-temperature-grown (LTG) GaAs exited by 850nm as a photoconductive mixer. Although 1.5μm telecom-wavelength technology is essential in universal instrumentation of the systems, the resistivity of the InGaAs is about 1kΩ cm, which leads relatively higher dark noise compared to LTG-GaAs. In this paper, we report terahertz wave homodyne detection system using a uni-traveling-carrier photodiode and the LTG-GaAs at 1.5μm. A dual-frequency optical source is used for both the generation and detection. Signal-to-noise ratio of about 30dB was achieved from 90 GHz to 150 GHz with the system. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Terahertz waves / frequency-domain / terahertz spectroscopy / homodyne-detection / LTG-GaAs / 1.5μm |
Paper # | PN2011-53,OPE2011-169,LQE2011-155,EST2011-103,MWP2011-71 |
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Conference Information | |
Committee | MWP |
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Conference Date | 2012/1/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Microwave and Millimeter-wave Photonics (MWP) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Homodyne Deteciton of Terahertz waves Using Low-Temperature-Grown GaAs at 1.5μm |
Sub Title (in English) | |
Keyword(1) | Terahertz waves |
Keyword(2) | frequency-domain |
Keyword(3) | terahertz spectroscopy |
Keyword(4) | homodyne-detection |
Keyword(5) | LTG-GaAs |
Keyword(6) | 1.5μm |
1st Author's Name | Genki KITAHARA |
1st Author's Affiliation | Graduate School of Engineering Science, Osaka University() |
2nd Author's Name | Shintaro HISATAKE |
2nd Author's Affiliation | Graduate School of Engineering Science, Osaka University |
3rd Author's Name | Katsuhiro AJITO |
3rd Author's Affiliation | NTT Microsystem Integration Laboratories, NTT Corporation |
4th Author's Name | Naoya KUKUTSU |
4th Author's Affiliation | NTT Microsystem Integration Laboratories, NTT Corporation |
5th Author's Name | Ho-Jin SONG |
5th Author's Affiliation | NTT Microsystem Integration Laboratories, NTT Corporation |
6th Author's Name | Tadao NAGATSUMA |
6th Author's Affiliation | Graduate School of Engineering Science, Osaka University |
Date | 2012-01-26 |
Paper # | PN2011-53,OPE2011-169,LQE2011-155,EST2011-103,MWP2011-71 |
Volume (vol) | vol.111 |
Number (no) | 416 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |