Presentation 2012-01-26
Homodyne Deteciton of Terahertz waves Using Low-Temperature-Grown GaAs at 1.5μm
Genki KITAHARA, Shintaro HISATAKE, Katsuhiro AJITO, Naoya KUKUTSU, Ho-Jin SONG, Tadao NAGATSUMA,
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Abstract(in English) Recently, frequency-domain techniques based on a continuous terahertz wave technology have extensively studied because it provides a higher signal-to-noise ratio and resolution in spectroscopic applications. Previous frequency-domain spectroscopic systems employ an InGaAs exited by 1.5μm or a low-temperature-grown (LTG) GaAs exited by 850nm as a photoconductive mixer. Although 1.5μm telecom-wavelength technology is essential in universal instrumentation of the systems, the resistivity of the InGaAs is about 1kΩ cm, which leads relatively higher dark noise compared to LTG-GaAs. In this paper, we report terahertz wave homodyne detection system using a uni-traveling-carrier photodiode and the LTG-GaAs at 1.5μm. A dual-frequency optical source is used for both the generation and detection. Signal-to-noise ratio of about 30dB was achieved from 90 GHz to 150 GHz with the system.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Terahertz waves / frequency-domain / terahertz spectroscopy / homodyne-detection / LTG-GaAs / 1.5μm
Paper # PN2011-53,OPE2011-169,LQE2011-155,EST2011-103,MWP2011-71
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Conference Information
Committee MWP
Conference Date 2012/1/19(1days)
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Registration To Microwave and Millimeter-wave Photonics (MWP)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Homodyne Deteciton of Terahertz waves Using Low-Temperature-Grown GaAs at 1.5μm
Sub Title (in English)
Keyword(1) Terahertz waves
Keyword(2) frequency-domain
Keyword(3) terahertz spectroscopy
Keyword(4) homodyne-detection
Keyword(5) LTG-GaAs
Keyword(6) 1.5μm
1st Author's Name Genki KITAHARA
1st Author's Affiliation Graduate School of Engineering Science, Osaka University()
2nd Author's Name Shintaro HISATAKE
2nd Author's Affiliation Graduate School of Engineering Science, Osaka University
3rd Author's Name Katsuhiro AJITO
3rd Author's Affiliation NTT Microsystem Integration Laboratories, NTT Corporation
4th Author's Name Naoya KUKUTSU
4th Author's Affiliation NTT Microsystem Integration Laboratories, NTT Corporation
5th Author's Name Ho-Jin SONG
5th Author's Affiliation NTT Microsystem Integration Laboratories, NTT Corporation
6th Author's Name Tadao NAGATSUMA
6th Author's Affiliation Graduate School of Engineering Science, Osaka University
Date 2012-01-26
Paper # PN2011-53,OPE2011-169,LQE2011-155,EST2011-103,MWP2011-71
Volume (vol) vol.111
Number (no) 416
Page pp.pp.-
#Pages 5
Date of Issue