Presentation 2012-01-26
Mid-IR vertical transition DFB quantum cascade laser
Jun-ichi Hashimoto, Yukihiro Tsuji, Hiroshi Inada, Takamitsu Miura, Makoto Murata, Hiroyuki Yoshinaga, Hideki Yagi, Takashi Kato, Michio Murata, Tsukuru Katsuyama,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We designed a new vertical-transition active layer structure for a Mid-IR quantum cascade laser (QCL). In this structure, effective optical gain increase can be obtained by enhancing radiative transition selectively with LO phonon scattering increase suppressed. We fabricated vertical-transition FP-QCL having this active layer, and found that 30% decrease of threshold current was achieved at room temperature compared with the conventional diagonal-transition FP-QCL. We also developed a complex-coupled type DFB-QCL using the same active layer, and succeeded in obtaining a single-mode pulse oscillation up to room temperature. The threshold current density at room temperature was about 3.8 kA/cm^2, and the lasing wavelength dependence on temperature was about 0.4 nm/K.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) quantum cascade laser / QCL / vertical-transition / diagonal-transition / DFB / Mid-IR
Paper # PN2011-50,OPE2011-166,LQE2011-152,EST2011-100,MWP2011-68
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Conference Information
Committee MWP
Conference Date 2012/1/19(1days)
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Paper Information
Registration To Microwave and Millimeter-wave Photonics (MWP)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Mid-IR vertical transition DFB quantum cascade laser
Sub Title (in English)
Keyword(1) quantum cascade laser
Keyword(2) QCL
Keyword(3) vertical-transition
Keyword(4) diagonal-transition
Keyword(5) DFB
Keyword(6) Mid-IR
1st Author's Name Jun-ichi Hashimoto
1st Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.()
2nd Author's Name Yukihiro Tsuji
2nd Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
3rd Author's Name Hiroshi Inada
3rd Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
4th Author's Name Takamitsu Miura
4th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
5th Author's Name Makoto Murata
5th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
6th Author's Name Hiroyuki Yoshinaga
6th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
7th Author's Name Hideki Yagi
7th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
8th Author's Name Takashi Kato
8th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
9th Author's Name Michio Murata
9th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
10th Author's Name Tsukuru Katsuyama
10th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
Date 2012-01-26
Paper # PN2011-50,OPE2011-166,LQE2011-152,EST2011-100,MWP2011-68
Volume (vol) vol.111
Number (no) 416
Page pp.pp.-
#Pages 5
Date of Issue