| Presentation | 2011-12-16 GaInAsP/Si Hybrid Laser with AlInAs Oxidation Current Confinement Layer by Surface Activated Bonding Ryo OSABE, Keita FUKUDA, Yusuke HAYASHI, Nobuhiko NISHIYAMA, Shigehisa ARAI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To introduce an optical gain into photonic integrated circuits on a Si platform, it is very attractive to utilize hybrid integration of III-V compound semiconductors. In this paper, we report on the bonding properties of a 500-nm-thick GaInAsP membrane structure bonded to Si, by the Surface Activated Bonding technology, and structural design of the hybrid laser with an AlInAs oxidation current confinement layer for highly efficient current injection. The full width at half maximum of the photoluminescence (PL) of the GalnAsP membrane structure on the Si waveguide was 38.2 meV, which is comparable to that of conventional OWs, and the PL peak intensity distribution was within the range of 90± 10%. We also calculated the proper oxide width of the AlInAs oxidation type hybrid laser and tried to demonstrate the oxidation process with the bonded wafer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Surface Activated Bonding / Hybrid laser / oxidation current blocking / silicon photonics |
| Paper # | LQE2011-133 |
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| Committee | LQE |
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| Conference Date | 2011/12/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaInAsP/Si Hybrid Laser with AlInAs Oxidation Current Confinement Layer by Surface Activated Bonding |
| Sub Title (in English) | |
| Keyword(1) | Surface Activated Bonding |
| Keyword(2) | Hybrid laser |
| Keyword(3) | oxidation current blocking |
| Keyword(4) | silicon photonics |
| 1st Author's Name | Ryo OSABE |
| 1st Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | Keita FUKUDA |
| 2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | Yusuke HAYASHI |
| 3rd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 4th Author's Name | Nobuhiko NISHIYAMA |
| 4th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 5th Author's Name | Shigehisa ARAI |
| 5th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology:Quantum Nanoelectronics Research Center Tokyo Institute of Technology |
| Date | 2011-12-16 |
| Paper # | LQE2011-133 |
| Volume (vol) | vol.111 |
| Number (no) | 359 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |