| Presentation | 2011-12-16 High-Temperature (220℃) CW Operation of 1300-nm-range Quantum Dot Laser Takeo KAGEYAMA, Kenichi NISHI, Masaomi YAMAGUCHI, Reio MOCHIDA, Yasunari MAEDA, Keizo TAKEMASA, Yu TANAKA, Tsuyoshi YAMAMOTO, Mitsuru SUGAWARA, Yasuhiko ARAKAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High temperature lasing operation of semiconductor lasers is important to realize sensing and data transmission at harsh environments like space or deep underground. In addition, the combination of a high temperature-resistant long-wavelength laser and an optical fiber is attractive to expand the field of application such as source exploration. Temperature dependence of the threshold current of a semiconductor laser can be drastically reduced by employing quantum-dot (QD) active layers, and recently QD lasers are applied to the light source such as telecom applications. Here we realized extremely high temperature up to 220℃ continuous-wave (CW) operation of long-wavelength lasers by employing high-density, highly uniform InAs/GaAs quantum dot technology. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | quantum dot / MBE / high-temperature / long-wavelength / semiconductor laser diode |
| Paper # | LQE2011-126 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2011/12/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-Temperature (220℃) CW Operation of 1300-nm-range Quantum Dot Laser |
| Sub Title (in English) | |
| Keyword(1) | quantum dot |
| Keyword(2) | MBE |
| Keyword(3) | high-temperature |
| Keyword(4) | long-wavelength |
| Keyword(5) | semiconductor laser diode |
| 1st Author's Name | Takeo KAGEYAMA |
| 1st Author's Affiliation | QD Laser, Inc.() |
| 2nd Author's Name | Kenichi NISHI |
| 2nd Author's Affiliation | QD Laser, Inc.:Institute for Nano Quantum Information Electronics, The University of Tokyo |
| 3rd Author's Name | Masaomi YAMAGUCHI |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Reio MOCHIDA |
| 4th Author's Affiliation | QD Laser, Inc.:Institute for Nano Quantum Information Electronics, The University of Tokyo |
| 5th Author's Name | Yasunari MAEDA |
| 5th Author's Affiliation | QD Laser, Inc. |
| 6th Author's Name | Keizo TAKEMASA |
| 6th Author's Affiliation | QD Laser, Inc. |
| 7th Author's Name | Yu TANAKA |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 8th Author's Name | Tsuyoshi YAMAMOTO |
| 8th Author's Affiliation | QD Laser, Inc.:Fujitsu Laboratories Ltd.:Institute for Nano Quantum Information Electronics, The University of Tokyo |
| 9th Author's Name | Mitsuru SUGAWARA |
| 9th Author's Affiliation | QD Laser, Inc.:Institute for Nano Quantum Information Electronics, The University of Tokyo |
| 10th Author's Name | Yasuhiko ARAKAWA |
| 10th Author's Affiliation | Institute of Industrial Science, The University of Tokyo |
| Date | 2011-12-16 |
| Paper # | LQE2011-126 |
| Volume (vol) | vol.111 |
| Number (no) | 359 |
| Page | pp.pp.- |
| #Pages | 4 |
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