Presentation	2011-12-16 Characteristics of Slow Light Modulator Laterally Integrated with VCSEL Toshikazu SHIMADA, Fumio KOYAMA,
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Abstract(in English)	We present the fabrication and characterization of a laterally integrated device with a VCSEL and a slow light modulator. The optical coupling from a VCSEL to slow light modulator is carried out to control the lateral optical penetration from a VCSEL into a slow light modulator. We are able to obtain a high coupling efficiency of more than 50% which is in the same level as conventional VCSELs. In this paper, we demonstrate the lateral integration of a VCSEL and a compact slow light modulator. We obtained an extinction ratio of 5dB at a voltage swing of 1.2V for a 20μm long ultra-compact slow light modulator. Also, the lateral coupling scheme with slow light devices can make VCSELs have new functionalities.
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Keyword(in English)	VCSEL / Slow light / Electro-absorption modulator
Paper #	LQE2011-124
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Committee	LQE
Conference Date	2011/12/9(1days)
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Paper Information
Registration To	Lasers and Quantum Electronics (LQE)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Characteristics of Slow Light Modulator Laterally Integrated with VCSEL
Sub Title (in English)
Keyword(1)	VCSEL
Keyword(2)	Slow light
Keyword(3)	Electro-absorption modulator
1st Author's Name	Toshikazu SHIMADA
1st Author's Affiliation	Tokyo Institute of Technology, P&I Lab.()
2nd Author's Name	Fumio KOYAMA
2nd Author's Affiliation	Tokyo Institute of Technology, P&I Lab.
Date	2011-12-16
Paper #	LQE2011-124
Volume (vol)	vol.111
Number (no)	359
Page	pp.pp.-
#Pages	4
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