Presentation 2011-12-16
Investigation on filamentary conduction paths formed in Pt/NiO/Pt resistive switching cells
Tatsuya IWATA, Yusuke NISHI, Tsunenobu KIMOTO,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Filamentary conductive paths (filaments) formed in Pt/NiO/Pt cells have been directly observed by Conductive-AFM. After forming process, deformations on the surface of NiO thin films are observed. The deformations have been confirmed to be protrusions or depressions with the diameter of about 1μm. It is revealed that from several to more than ten filaments are preferentially distributed along the edge of a deformation. The area of a filament is typically 2500 nm^2, ranging approximately from 200 nm^2 to 20000 nm^2. In low-resistance state, current through the cells is dominated by the filaments with the resistivity of the order of 10mΩcm. It is also suggested that the variation of the resistance in low-resistance state originate from the changes in the area as well as the shape of the filaments.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ReRAM / Nickel oxide / Conductive-AFM
Paper # SDM2011-148
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Conference Information
Committee SDM
Conference Date 2011/12/9(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Investigation on filamentary conduction paths formed in Pt/NiO/Pt resistive switching cells
Sub Title (in English)
Keyword(1) ReRAM
Keyword(2) Nickel oxide
Keyword(3) Conductive-AFM
1st Author's Name Tatsuya IWATA
1st Author's Affiliation Department of Electronic Science and Engineering, Kyoto University()
2nd Author's Name Yusuke NISHI
2nd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
3rd Author's Name Tsunenobu KIMOTO
3rd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University:Photonics and Electronics Science and Engineering Center(PESEC), Kyoto University
Date 2011-12-16
Paper # SDM2011-148
Volume (vol) vol.111
Number (no) 357
Page pp.pp.-
#Pages 6
Date of Issue