Presentation 2011-12-16
Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section
Seigo MORI, Naoya MORIOKA, Jun SUDA, Tsunenobu KIMOTO,
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Abstract(in English) We calculated the conduction band structures of [001]- and [110]-oriented Si nanowires with rectangular cross section using a tight-binding approximation and investigated the dependence of the band structures on those cross-sectional shapes. By comparing them with the full-band distribution of bulk Si, the subband structures of Si nanowires with the width over 4nm can be quantitatively explained by nonparabolicity of the conduction band of bulk Si. In addition, the effective mass of very narrow (< 3nm) [110] nanowires is decreased by a valley splitting and it depends on the cross sectional shapes of the nanowires. It is expected that n-MOSFETs with such nanowires have superior characteristics.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Si Nanowire / Tight-Binding Approximation / Conduction Band / Nonparabolicity / Effective Mass / Valley Splitting
Paper # SDM2011-146
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Committee SDM
Conference Date 2011/12/9(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section
Sub Title (in English)
Keyword(1) Si Nanowire
Keyword(2) Tight-Binding Approximation
Keyword(3) Conduction Band
Keyword(4) Nonparabolicity
Keyword(5) Effective Mass
Keyword(6) Valley Splitting
1st Author's Name Seigo MORI
1st Author's Affiliation Department of Electronic Science and Engineering, Kyoto University()
2nd Author's Name Naoya MORIOKA
2nd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
3rd Author's Name Jun SUDA
3rd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
4th Author's Name Tsunenobu KIMOTO
4th Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
Date 2011-12-16
Paper # SDM2011-146
Volume (vol) vol.111
Number (no) 357
Page pp.pp.-
#Pages 6
Date of Issue