Presentation 2011-12-16
Thermal Sensor Using Poly-Si Thin-Film Transistor
Jun Taya, Tomonori Mukuda, Akihiro Nakashima, Mutsumi Kimura,
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Abstract(in English) We propose a thermal sensor using a poly-Si thin-film transistors(TFTs). We pay attention to temperature dependence of the transistor characteristic and use it for thermal sensor. In addition, we employ active matrix driving for thermal area sensor. Moreover the detectable temperature is expanded by applying multiple and sequential holding periods. Finally, we used ring osirater for thermal sensor.
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Keyword(in English) Poly-Si TFT / temperature dependence / off current / on current / thermal sensor
Paper # SDM2011-141
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Conference Information
Committee SDM
Conference Date 2011/12/9(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Thermal Sensor Using Poly-Si Thin-Film Transistor
Sub Title (in English)
Keyword(1) Poly-Si TFT
Keyword(2) temperature dependence
Keyword(3) off current
Keyword(4) on current
Keyword(5) thermal sensor
1st Author's Name Jun Taya
1st Author's Affiliation Faculty of Science and Technology, Ryukoku University()
2nd Author's Name Tomonori Mukuda
2nd Author's Affiliation Faculty of Science and Technology, Ryukoku University
3rd Author's Name Akihiro Nakashima
3rd Author's Affiliation Faculty of Science and Technology, Ryukoku University
4th Author's Name Mutsumi Kimura
4th Author's Affiliation Faculty of Science and Technology, Ryukoku University
Date 2011-12-16
Paper # SDM2011-141
Volume (vol) vol.111
Number (no) 357
Page pp.pp.-
#Pages 6
Date of Issue