| Presentation | 2011-12-16 Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures Hiroki NIWA, Gan FENG, Jun SUDA, Tsunenobu KIMOTO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone JTE and Space-Modulated JTE (SM-JTE), a breakdown voltage over 15kV have been achieved. This breakdown voltage corresponds to about 93% of the parallel-plane breakdown voltage, which is fairly high for over 10kV-class SiC diodes. The window of optimum JTE dose to obtain high breakdown voltage was widened, which indicates the robustness to the deviation of JTE dose. By comparing the JTE dose dependence of the breakdown voltage obtained from simulation and experimental results, impacts of the charge near the SiO_2/SiC interface are discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 4H-SiC / PiN diode / Junction Termination Extension(JTE) / Device simulation / Interface charge |
| Paper # | SDM2011-135 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2011/12/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures |
| Sub Title (in English) | |
| Keyword(1) | 4H-SiC |
| Keyword(2) | PiN diode |
| Keyword(3) | Junction Termination Extension(JTE) |
| Keyword(4) | Device simulation |
| Keyword(5) | Interface charge |
| 1st Author's Name | Hiroki NIWA |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Gan FENG |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Jun SUDA |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | Tsunenobu KIMOTO |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 2011-12-16 |
| Paper # | SDM2011-135 |
| Volume (vol) | vol.111 |
| Number (no) | 357 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |