Presentation	2011-12-15 4-Times Faster Rising V_(10V), 15% Lower Power V_(20V), Wide Output Voltage Range Voltage Generator System for 4-Times Faster 3D-integrated Solid-State Drives(Poster Presentation) Teruyoshi HATANAKA, Ken TAKEUCHI,
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Abstract(in English)	A wide output voltage range from 10 V to 20 V voltage generator system is proposed for 3D-SSDs. The circuits are fabricated with the smart mix and match of the standard CMOS, low voltage and high voltage NAND flash memory technologies. The measured rising time for V_, 10 V, is four times shorter. The power consumption for V_, 20 V, decreases by 15%. As a result, the SSD performance increases by 4 times.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	solid-state-drive / NAND flash memory / boost converter
Paper #	ICD2011-117
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Conference Information
Committee	ICD
Conference Date	2011/12/8(1days)
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Paper Information
Registration To	Integrated Circuits and Devices (ICD)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	4-Times Faster Rising V_(10V), 15% Lower Power V_(20V), Wide Output Voltage Range Voltage Generator System for 4-Times Faster 3D-integrated Solid-State Drives(Poster Presentation)
Sub Title (in English)
Keyword(1)	solid-state-drive
Keyword(2)	NAND flash memory
Keyword(3)	boost converter
1st Author's Name	Teruyoshi HATANAKA
1st Author's Affiliation	The University of Tokyo()
2nd Author's Name	Ken TAKEUCHI
2nd Author's Affiliation	The University of Tokyo
Date	2011-12-15
Paper #	ICD2011-117
Volume (vol)	vol.111
Number (no)	352
Page	pp.pp.-
#Pages	6
Date of Issue