| Presentation | 2011-11-18 Growth of (Si)(Ga)AlC(P) thin film on sapphire by metal organic chemical vapor deposition Yuya Ohnishi, Fumiya Horie, Shiro Sakai, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Al_4C_3 film was grown by MOCVD by supplying TMA, CH_4 on sapphire. Si and P were supplied to make it to dope to n-type. The P-inclusion makes CL to increase. The new GaC was grown to MOCVD by adding TMG to make a hetero-structure. The growth condition was summarized. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlC / Al_4C_3 / GaC / MOCVD |
| Paper # | ED2011-96,CPM2011-145,LQE2011-119 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2011/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of (Si)(Ga)AlC(P) thin film on sapphire by metal organic chemical vapor deposition |
| Sub Title (in English) | |
| Keyword(1) | AlC |
| Keyword(2) | Al_4C_3 |
| Keyword(3) | GaC |
| Keyword(4) | MOCVD |
| 1st Author's Name | Yuya Ohnishi |
| 1st Author's Affiliation | Institute of Technology and Science, The University of Tokushima() |
| 2nd Author's Name | Fumiya Horie |
| 2nd Author's Affiliation | Institute of Technology and Science, The University of Tokushima |
| 3rd Author's Name | Shiro Sakai |
| 3rd Author's Affiliation | Institute of Technology and Science, The University of Tokushima |
| Date | 2011-11-18 |
| Paper # | ED2011-96,CPM2011-145,LQE2011-119 |
| Volume (vol) | vol.111 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |