Presentation 2011-11-18
Chracteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN deep-UV LEDs
Noritoshi MAEDA, Sachie FUJIKAWA, Hideki HIRAYAMA,
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Abstract(in English) We investigated the characteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate by the metal-organic chemical vapor phase deposition (MOCVD). We found that a macrostep geometry is generated on m-axis oriented samples but macrostep disappears on a-axis oriented one. It has already been reported that small off-angle such as under-1° makes macrostep to disappear for a-axis oriented sample. However, it has not been investigated so much for macrostep on m-axis oriented sample. Finally we achieved high-efficiency AlGaN quantum well (QW) deep-ultraviolet (DUV) light-emitting diodes (LEDs) on AlN templates grown on both a- and m-axis oriented. The peak wavelengths were 270 and 277 nm, respectively. The maximum external quantum efficiencies (EQEs) of the LEDs were 3.8 and 3.2 %, respectively.
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Keyword(in English) deep-UV LEDs / AlGaN / AlN / MOCVD / step bunching / sapphire
Paper # ED2011-94,CPM2011-143,LQE2011-117
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Committee ED
Conference Date 2011/11/10(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Chracteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN deep-UV LEDs
Sub Title (in English)
Keyword(1) deep-UV LEDs
Keyword(2) AlGaN
Keyword(3) AlN
Keyword(4) MOCVD
Keyword(5) step bunching
Keyword(6) sapphire
1st Author's Name Noritoshi MAEDA
1st Author's Affiliation RIKEN()
2nd Author's Name Sachie FUJIKAWA
2nd Author's Affiliation RIKEN
3rd Author's Name Hideki HIRAYAMA
3rd Author's Affiliation RIKEN
Date 2011-11-18
Paper # ED2011-94,CPM2011-143,LQE2011-117
Volume (vol) vol.111
Number (no) 290
Page pp.pp.-
#Pages 6
Date of Issue