| Presentation | 2011-11-18 Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inch×3 MOVPE system Takuya Mino, Hideki Hirayama, Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed highly-uniform 260-nm-band AlGaN-based DUV LEDs fabricated on AlN templates on (0001) sapphire using a 2-inch×3 reactor by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE), for the purpose of realizing commercially-available low-cost DUV LEDs. 4-μm-thick, high Al polarity, and low-TDD AlN templates were successfully grown on (0001) sapphire substrates using a NH_3 pulsed-flow multilayer (ML) growth method. Therefore DUV LEDs on the high quality AlN templates showed good uniformity and high performance in the emission wavelength and in the output power, in 2-inch wafer and wafer to wafer. The DUV LEDs with flip-chip configuration demonstrated output power of 17.1 mW at 500 mA and 40 mW at 1500 mA measured under CW and pulsed operations, respectively. The maximum external quantum efficiency (EQE) of 1% was realized. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DUV LEDs / 2-inch×3 reactor / AlN templates |
| Paper # | ED2011-93,CPM2011-142,LQE2011-116 |
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| Committee | ED |
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| Conference Date | 2011/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inch×3 MOVPE system |
| Sub Title (in English) | |
| Keyword(1) | DUV LEDs |
| Keyword(2) | 2-inch×3 reactor |
| Keyword(3) | AlN templates |
| 1st Author's Name | Takuya Mino |
| 1st Author's Affiliation | The institute of Chemistry and Physics (RIKEN):Panasonic Electric Works Co., Ltd.() |
| 2nd Author's Name | Hideki Hirayama |
| 2nd Author's Affiliation | The institute of Chemistry and Physics (RIKEN) |
| 3rd Author's Name | Takayoshi Takano |
| 3rd Author's Affiliation | The institute of Chemistry and Physics (RIKEN):Panasonic Electric Works Co., Ltd. |
| 4th Author's Name | Norimichi Noguchi |
| 4th Author's Affiliation | The institute of Chemistry and Physics (RIKEN):Panasonic Electric Works Co., Ltd. |
| 5th Author's Name | Kenji Tsubaki |
| 5th Author's Affiliation | The institute of Chemistry and Physics (RIKEN):Panasonic Electric Works Co., Ltd. |
| Date | 2011-11-18 |
| Paper # | ED2011-93,CPM2011-142,LQE2011-116 |
| Volume (vol) | vol.111 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 4 |
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