| Presentation | 2011-11-17 Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated impacts of dry etching of GaN and AlGaN surfaces on interface properties of GaN-based MOS structures. For the dry etching, we used ECR-assisted plasma with CH_4/H_2/N_2/Ar gas mixture and ICP-assisted plasma with Cl_2/BCl_3 gas mixture. Both processes induced the disorder of chemical bonds at the GaN surface, causing high-density of electronic states at AhCb/GaN interfaces. A post-annealing process at 400C is effective in decreasing interface state densities, e.g., 5x10^<11>cm^<-2>eV^<-1> for the ICP-processed MOS sample. On the other hand, the interface state densities with 1x10^<12>cm^<-2>eV^<-1> or higher remained at the ICP-processed Al_2O_3/AlGaN interface even after the post-annealing process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | dry etching / ICP / ECR / MOS / GaN / AlGaN / Al_2O_3 / interface state / C-V |
| Paper # | ED2011-78,CPM2011-127,LQE2011-101 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2011/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN |
| Sub Title (in English) | |
| Keyword(1) | dry etching |
| Keyword(2) | ICP |
| Keyword(3) | ECR |
| Keyword(4) | MOS |
| Keyword(5) | GaN |
| Keyword(6) | AlGaN |
| Keyword(7) | Al_2O_3 |
| Keyword(8) | interface state |
| Keyword(9) | C-V |
| 1st Author's Name | Sungsik Kim |
| 1st Author's Affiliation | Graduate school of Information Science and Technology, Research Center for Integrated Quantum Electronics Hokkaido University() |
| 2nd Author's Name | Yujin Hori |
| 2nd Author's Affiliation | Graduate school of Information Science and Technology, Research Center for Integrated Quantum Electronics Hokkaido University |
| 3rd Author's Name | Zenji Yatabe |
| 3rd Author's Affiliation | Graduate school of Information Science and Technology, Research Center for Integrated Quantum Electronics Hokkaido University |
| 4th Author's Name | Tamotsu Hashizume |
| 4th Author's Affiliation | JST-CREST |
| Date | 2011-11-17 |
| Paper # | ED2011-78,CPM2011-127,LQE2011-101 |
| Volume (vol) | vol.111 |
| Number (no) | 290 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |