| Presentation | 2011-11-18 2D-mapping measurement of residual strain in GaN substrates by micro-reflectance spectroscopy Atsushi A. YAMAGUCHI, Huiyuan GENG, Haruo SUNAKAWA, Yujiro ISHIHARA, Toshiharu MATSUEDA, Akira USUI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed a novel method to precisely measure very small residual strains (～0.01%) in GaN substrates with micron-order spatial resolution. Strain components are estimated from exciton energies in low-temperature reflectance spectra measured under an optical microscope. The high strain sensitivity comes from high sensitivity of valence-band energy positions, which are directly connected with the exciton energies, to strain components. The method was applied for GaN substrates fabricated by different techniques, and it is found that strain depth profiles largely depend on fabrication techniques. Furthermore, we will discuss the possibility of simultaneous 2D-mapping measurements of strain components and carrier concentrations which could be estimated from the broadening factors of exciton signals in reflectance spectra. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN substrates / residual strain / valence bands / reflectance spectroscopy |
| Paper # | ED2011-90,CPM2011-139,LQE2011-113 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 2D-mapping measurement of residual strain in GaN substrates by micro-reflectance spectroscopy |
| Sub Title (in English) | |
| Keyword(1) | GaN substrates |
| Keyword(2) | residual strain |
| Keyword(3) | valence bands |
| Keyword(4) | reflectance spectroscopy |
| 1st Author's Name | Atsushi A. YAMAGUCHI |
| 1st Author's Affiliation | Optoelectronic Device System R&D Center, Kanazawa Institute of Technology() |
| 2nd Author's Name | Huiyuan GENG |
| 2nd Author's Affiliation | Nitride Semiconductors Department, Furukawa Co., Ltd. |
| 3rd Author's Name | Haruo SUNAKAWA |
| 3rd Author's Affiliation | Nitride Semiconductors Department, Furukawa Co., Ltd. |
| 4th Author's Name | Yujiro ISHIHARA |
| 4th Author's Affiliation | Nitride Semiconductors Department, Furukawa Co., Ltd. |
| 5th Author's Name | Toshiharu MATSUEDA |
| 5th Author's Affiliation | Nitride Semiconductors Department, Furukawa Co., Ltd. |
| 6th Author's Name | Akira USUI |
| 6th Author's Affiliation | Nitride Semiconductors Department, Furukawa Co., Ltd. |
| Date | 2011-11-18 |
| Paper # | ED2011-90,CPM2011-139,LQE2011-113 |
| Volume (vol) | vol.111 |
| Number (no) | 291 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |