| Presentation | 2011-11-17 Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN HEMT Tomotaka NARITA, Akio WAKEJIMA, Takashi EGAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Transparent gate AlGaN/GaN HEMT(High Electron Mobility Transistor) on a Si substrate was fabricated. We estimated as characteristics of DC and UV detectors by UV and visible light irradiation from the surface side. A significant drain current increase and a negative threshold-voltage shift occurred by UV light irradiation. Thus photogenerated carriers under transparent gate electrode were observed. The gate electrode enabled the device to operate under pinch-off conditions, resulted in low dark current. A high responsivity of 3×10^5A/W at 200μW/cm2 under a wavelength of 360nm was obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN / HEMT / UV photodetectors |
| Paper # | ED2011-86,CPM2011-135,LQE2011-109 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN HEMT |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | HEMT |
| Keyword(4) | UV photodetectors |
| 1st Author's Name | Tomotaka NARITA |
| 1st Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology() |
| 2nd Author's Name | Akio WAKEJIMA |
| 2nd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 3rd Author's Name | Takashi EGAWA |
| 3rd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2011-11-17 |
| Paper # | ED2011-86,CPM2011-135,LQE2011-109 |
| Volume (vol) | vol.111 |
| Number (no) | 291 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |