| Presentation | 2011-11-17 Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | There are high expectations for a GaN high electron mobility transistor (GaN-HEMT) to serve as a key device for a high power and high efficiency millimeter-wave amplifier. This paper describes the Si ion implantation technology in order to reduce on-resistance of GaN-HEMT. Si ion was implanted into GaN-HEMT with n-GaN/i-AlN/n-GaN triple cap layer. The contact resistance was reduced from 0.61 Ωmm to 0.09 Ωmm. With n-GaN/i-AlN/n-GaN triple cap layer, current collapse of short-gate-length GaN-HEMT with the gate length of 0.12 μm could be suppressed, resulting in low on-resistance. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ion implantation / Ohmic contact / millimeter-wave / Short-gate-length / Current collapse / Triple cap layer |
| Paper # | ED2011-85,CPM2011-134,LQE2011-108 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications |
| Sub Title (in English) | |
| Keyword(1) | Ion implantation |
| Keyword(2) | Ohmic contact |
| Keyword(3) | millimeter-wave |
| Keyword(4) | Short-gate-length |
| Keyword(5) | Current collapse |
| Keyword(6) | Triple cap layer |
| 1st Author's Name | Masato Nishimori |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Kozo Makiyama |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Toshihiro Ohki |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Atsushi Yamada |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | Kenji Imanishi |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 6th Author's Name | Toshihide Kikkawa |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 7th Author's Name | Naoki Hara |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 8th Author's Name | Keiji Watanabe |
| 8th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 2011-11-17 |
| Paper # | ED2011-85,CPM2011-134,LQE2011-108 |
| Volume (vol) | vol.111 |
| Number (no) | 291 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |