Presentation | 2011-11-17 Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | There are high expectations for a GaN high electron mobility transistor (GaN-HEMT) to serve as a key device for a high power and high efficiency millimeter-wave amplifier. This paper describes the Si ion implantation technology in order to reduce on-resistance of GaN-HEMT. Si ion was implanted into GaN-HEMT with n-GaN/i-AlN/n-GaN triple cap layer. The contact resistance was reduced from 0.61 Ωmm to 0.09 Ωmm. With n-GaN/i-AlN/n-GaN triple cap layer, current collapse of short-gate-length GaN-HEMT with the gate length of 0.12 μm could be suppressed, resulting in low on-resistance. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Ion implantation / Ohmic contact / millimeter-wave / Short-gate-length / Current collapse / Triple cap layer |
Paper # | ED2011-85,CPM2011-134,LQE2011-108 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 2011/11/10(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications |
Sub Title (in English) | |
Keyword(1) | Ion implantation |
Keyword(2) | Ohmic contact |
Keyword(3) | millimeter-wave |
Keyword(4) | Short-gate-length |
Keyword(5) | Current collapse |
Keyword(6) | Triple cap layer |
1st Author's Name | Masato Nishimori |
1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
2nd Author's Name | Kozo Makiyama |
2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
3rd Author's Name | Toshihiro Ohki |
3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
4th Author's Name | Atsushi Yamada |
4th Author's Affiliation | Fujitsu Laboratories Ltd. |
5th Author's Name | Kenji Imanishi |
5th Author's Affiliation | Fujitsu Laboratories Ltd. |
6th Author's Name | Toshihide Kikkawa |
6th Author's Affiliation | Fujitsu Laboratories Ltd. |
7th Author's Name | Naoki Hara |
7th Author's Affiliation | Fujitsu Laboratories Ltd. |
8th Author's Name | Keiji Watanabe |
8th Author's Affiliation | Fujitsu Laboratories Ltd. |
Date | 2011-11-17 |
Paper # | ED2011-85,CPM2011-134,LQE2011-108 |
Volume (vol) | vol.111 |
Number (no) | 291 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |