| Presentation | 2011-11-17 High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch Toshihide IDE, Mitsuaki SHIMIZU, Xu-Qiang SHEN, Tatsuo MORITA, Tetsuzo UEDA, Tsuyoshi TANAKA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN-Gate Injection Transistor(GIT) Bi-directional Switches (BDSWs) is capable of the low on-resistance operation as compared with typical switching devices, and by employing GaN GIT-BDSWs in the switching circuit, the reduction of a number of the devices and a switching loss are expected. In this study, we propose the equivalent-circuit-model for GaN GIT-BDSWs in order to design switching circuits employing these devices. Although the GIT-BDSWs have four terminals, the equivalent-circuit-model for those consists of three terminals, one gate and two sources, because one gate keeps opened during switching the other gate in the typical operation. The circuit elements in the equivalent-circuit-model consist of one current source and three capacitances. The parameters of the circuit elements are extracted with high accuracy due to the extraction form the switching characteristics. When the switching wave forms and losses in the chopper circuit are calculated by this model, the accuracy of the calculation for the experiments exceeds 90%. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Gate Insulated Transistor(GIT) / Bi-directional Switch / Equivalent-circuit-model |
| Paper # | ED2011-84,CPM2011-133,LQE2011-107 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Gate Insulated Transistor(GIT) |
| Keyword(3) | Bi-directional Switch |
| Keyword(4) | Equivalent-circuit-model |
| 1st Author's Name | Toshihide IDE |
| 1st Author's Affiliation | Advanced Industrial Science and Technology (AIST)() |
| 2nd Author's Name | Mitsuaki SHIMIZU |
| 2nd Author's Affiliation | Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Xu-Qiang SHEN |
| 3rd Author's Affiliation | Advanced Industrial Science and Technology (AIST) |
| 4th Author's Name | Tatsuo MORITA |
| 4th Author's Affiliation | Panasonic Corporation |
| 5th Author's Name | Tetsuzo UEDA |
| 5th Author's Affiliation | Panasonic Corporation |
| 6th Author's Name | Tsuyoshi TANAKA |
| 6th Author's Affiliation | Panasonic Corporation |
| Date | 2011-11-17 |
| Paper # | ED2011-84,CPM2011-133,LQE2011-107 |
| Volume (vol) | vol.111 |
| Number (no) | 291 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |