Presentation | 2011-11-17 Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures Narihiko MAEDA, Masanobu HIOKI, Satoshi SASAKI, Yuichi HARADA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In recessed-gate AlGaN/GaN Heterostructure field-effect transistors (HFETs) for E-mode operation, enhanced-barrier structures have been proposed that are favorable for attaining a higher drain current density and advantageous for E-mode device fabrication. In the proposed enhanced-barrier structures, a thin AlGaN layer with a higher Al composition is inserted into the AlGaN barrier, with the inserted layer removed in the recessed region. This enlarges the difference in the electron density in recessed and non-recessed regions, since the electron density was confirmed to increase by the inserted layer. The enhanced-barrier structures were applied to a double-heterostructure GaN channel, which helps depletion of channel electrons and hence favorable for higher threshold voltage. The fabricated devices employing MIS (insulated-gate) structure exhibited an excellent E-mode operation with a threshold voltage of +3.6 V and a drain current density of 620 mA/mm. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN HFET / E-mode / recessed-gate / enhanced-barrier structure / MIS structure / double-heterostructure channel |
Paper # | ED2011-83,CPM2011-132,LQE2011-106 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2011/11/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures |
Sub Title (in English) | |
Keyword(1) | GaN HFET |
Keyword(2) | E-mode |
Keyword(3) | recessed-gate |
Keyword(4) | enhanced-barrier structure |
Keyword(5) | MIS structure |
Keyword(6) | double-heterostructure channel |
1st Author's Name | Narihiko MAEDA |
1st Author's Affiliation | NTT Photonics Laboratories, NTT Corporation() |
2nd Author's Name | Masanobu HIOKI |
2nd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
3rd Author's Name | Satoshi SASAKI |
3rd Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
4th Author's Name | Yuichi HARADA |
4th Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
Date | 2011-11-17 |
Paper # | ED2011-83,CPM2011-132,LQE2011-106 |
Volume (vol) | vol.111 |
Number (no) | 291 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |