Presentation 2011-11-17
Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures
Narihiko MAEDA, Masanobu HIOKI, Satoshi SASAKI, Yuichi HARADA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) In recessed-gate AlGaN/GaN Heterostructure field-effect transistors (HFETs) for E-mode operation, enhanced-barrier structures have been proposed that are favorable for attaining a higher drain current density and advantageous for E-mode device fabrication. In the proposed enhanced-barrier structures, a thin AlGaN layer with a higher Al composition is inserted into the AlGaN barrier, with the inserted layer removed in the recessed region. This enlarges the difference in the electron density in recessed and non-recessed regions, since the electron density was confirmed to increase by the inserted layer. The enhanced-barrier structures were applied to a double-heterostructure GaN channel, which helps depletion of channel electrons and hence favorable for higher threshold voltage. The fabricated devices employing MIS (insulated-gate) structure exhibited an excellent E-mode operation with a threshold voltage of +3.6 V and a drain current density of 620 mA/mm.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN HFET / E-mode / recessed-gate / enhanced-barrier structure / MIS structure / double-heterostructure channel
Paper # ED2011-83,CPM2011-132,LQE2011-106
Date of Issue

Conference Information
Committee CPM
Conference Date 2011/11/10(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures
Sub Title (in English)
Keyword(1) GaN HFET
Keyword(2) E-mode
Keyword(3) recessed-gate
Keyword(4) enhanced-barrier structure
Keyword(5) MIS structure
Keyword(6) double-heterostructure channel
1st Author's Name Narihiko MAEDA
1st Author's Affiliation NTT Photonics Laboratories, NTT Corporation()
2nd Author's Name Masanobu HIOKI
2nd Author's Affiliation NTT Photonics Laboratories, NTT Corporation
3rd Author's Name Satoshi SASAKI
3rd Author's Affiliation NTT Basic Research Laboratories, NTT Corporation
4th Author's Name Yuichi HARADA
4th Author's Affiliation NTT Basic Research Laboratories, NTT Corporation
Date 2011-11-17
Paper # ED2011-83,CPM2011-132,LQE2011-106
Volume (vol) vol.111
Number (no) 291
Page pp.pp.-
#Pages 6
Date of Issue