Presentation | 2011-11-17 Analysis of Recovery process in AlGaN/GaN HFET Current Collapse Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estimated that the energy level of the traps responsible for current collapse lies between 1.9eV and 2.6eV from conduction band. The recovery time constant around 270s, however, has almost no temperature dependency indicating not by the electron emission from the traps. It is estimated that the observed recovery may be not related to direct trap mechanisms but other processes such as hole generation by band to band tunneling. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlGaN/GaN / HFET / current collapse / deep level / band to band tunneling |
Paper # | ED2011-82,CPM2011-131,LQE2011-105 |
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Committee | CPM |
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Conference Date | 2011/11/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Analysis of Recovery process in AlGaN/GaN HFET Current Collapse |
Sub Title (in English) | |
Keyword(1) | AlGaN/GaN |
Keyword(2) | HFET |
Keyword(3) | current collapse |
Keyword(4) | deep level |
Keyword(5) | band to band tunneling |
1st Author's Name | Taishi Hosokawa |
1st Author's Affiliation | Institute of Technology and Science, The University of Tokushima() |
2nd Author's Name | Yusuke Ikawa |
2nd Author's Affiliation | Institute of Technology and Science, The University of Tokushima |
3rd Author's Name | Yusuke Kio |
3rd Author's Affiliation | Institute of Technology and Science, The University of Tokushima |
4th Author's Name | Jin-Ping Ao |
4th Author's Affiliation | Institute of Technology and Science, The University of Tokushima |
5th Author's Name | Yasuo Ohno |
5th Author's Affiliation | Institute of Technology and Science, The University of Tokushima |
Date | 2011-11-17 |
Paper # | ED2011-82,CPM2011-131,LQE2011-105 |
Volume (vol) | vol.111 |
Number (no) | 291 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |