Presentation 2011-11-17
Analysis of Recovery process in AlGaN/GaN HFET Current Collapse
Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno,
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Abstract(in English) The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estimated that the energy level of the traps responsible for current collapse lies between 1.9eV and 2.6eV from conduction band. The recovery time constant around 270s, however, has almost no temperature dependency indicating not by the electron emission from the traps. It is estimated that the observed recovery may be not related to direct trap mechanisms but other processes such as hole generation by band to band tunneling.
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Keyword(in English) AlGaN/GaN / HFET / current collapse / deep level / band to band tunneling
Paper # ED2011-82,CPM2011-131,LQE2011-105
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Committee CPM
Conference Date 2011/11/10(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Recovery process in AlGaN/GaN HFET Current Collapse
Sub Title (in English)
Keyword(1) AlGaN/GaN
Keyword(2) HFET
Keyword(3) current collapse
Keyword(4) deep level
Keyword(5) band to band tunneling
1st Author's Name Taishi Hosokawa
1st Author's Affiliation Institute of Technology and Science, The University of Tokushima()
2nd Author's Name Yusuke Ikawa
2nd Author's Affiliation Institute of Technology and Science, The University of Tokushima
3rd Author's Name Yusuke Kio
3rd Author's Affiliation Institute of Technology and Science, The University of Tokushima
4th Author's Name Jin-Ping Ao
4th Author's Affiliation Institute of Technology and Science, The University of Tokushima
5th Author's Name Yasuo Ohno
5th Author's Affiliation Institute of Technology and Science, The University of Tokushima
Date 2011-11-17
Paper # ED2011-82,CPM2011-131,LQE2011-105
Volume (vol) vol.111
Number (no) 291
Page pp.pp.-
#Pages 6
Date of Issue