Presentation 2011-11-17
Current Transport Characteristics of Quasi-Al_xGa_<1-x>N/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities
Takafumi OKUDA, Hiroki MIYAKE, Tsunenobu KIMOTO, Jun SUDA,
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Abstract(in English) The current transport characteristics of the quasi-Al_xGa_<1-x>N/SiC Heterojunction Bipolar Transistors (HBTs) with various band discontinuities were investigated in the low current range by means of Gummel plot. In the low current range, the base currents of the HBTs were dominated by recombination currents and the amount of recombination among the HBTs were different. The collector current characteristics of the HBTs were almost the same in spite of the various band discontinuities and the ideality factors n were 1.0. The collector currents were dominated by the diffusion process in the base region and electrons were injected from the AlGaN emitter without any additional voltage drops in the low current range.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) 4H-SiC / AlGaN / Heterojunction / HBT / Gummel plot
Paper # ED2011-81,CPM2011-130,LQE2011-104
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Conference Information
Committee CPM
Conference Date 2011/11/10(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Current Transport Characteristics of Quasi-Al_xGa_<1-x>N/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities
Sub Title (in English)
Keyword(1) 4H-SiC
Keyword(2) AlGaN
Keyword(3) Heterojunction
Keyword(4) HBT
Keyword(5) Gummel plot
1st Author's Name Takafumi OKUDA
1st Author's Affiliation Department of Electronics Science and Engineering()
2nd Author's Name Hiroki MIYAKE
2nd Author's Affiliation Department of Electronics Science and Engineering
3rd Author's Name Tsunenobu KIMOTO
3rd Author's Affiliation Photonics and Electronics Science and Engineering Center:Department of Electronics Science and Engineering
4th Author's Name Jun SUDA
4th Author's Affiliation Department of Electronics Science and Engineering
Date 2011-11-17
Paper # ED2011-81,CPM2011-130,LQE2011-104
Volume (vol) vol.111
Number (no) 291
Page pp.pp.-
#Pages 4
Date of Issue