| Presentation | 2011-11-17 Characterization of insulators and interfaces in GaN-based MIS-diodes Yasuhiro IWATA, Toshiharu KUBO, Takashi EGAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Al_2O_3 was focused as an insulator in GaN-based MIS structures. We fabricated MIS diodes using AlO_x as the insulator deposited by ALD and evaluated the characteristics. H_2O and O_3 were used as oxygen precursor, and post-deposition annealing was made at 400 ℃, 20 min. As for the composition x and the bandgap E_g, XPS analysis revealed that, x=2.0, and E_g was 6.5～6.8 eV in all conditions. Larger suppression of gate leak current and interface state density was obtained by using O_3 instead of H_2O. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MIS / Diode / ALD / insulator / interface |
| Paper # | ED2011-80,CPM2011-129,LQE2011-103 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of insulators and interfaces in GaN-based MIS-diodes |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MIS |
| Keyword(3) | Diode |
| Keyword(4) | ALD |
| Keyword(5) | insulator |
| Keyword(6) | interface |
| 1st Author's Name | Yasuhiro IWATA |
| 1st Author's Affiliation | Research Center for Nano-Device System, Nagoya Institute of Technology() |
| 2nd Author's Name | Toshiharu KUBO |
| 2nd Author's Affiliation | Research Center for Nano-Device System, Nagoya Institute of Technology |
| 3rd Author's Name | Takashi EGAWA |
| 3rd Author's Affiliation | Research Center for Nano-Device System, Nagoya Institute of Technology |
| Date | 2011-11-17 |
| Paper # | ED2011-80,CPM2011-129,LQE2011-103 |
| Volume (vol) | vol.111 |
| Number (no) | 291 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |