Presentation | 2011-11-17 Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures Md. Tanvir HASAN, Hirokuni TOKUDA, Masaaki KUZUHARA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper describes the temperature dependent two dimensional electron gas (2DEG) properties in AlInN/AlN/GaN heterostructures. Hall mobility (aH) and 2DEG density (n_s) have been measured from 77 up to 973 K, where the atmospheric condition is changed as measured in vacuum and air. The μ_H decreases monotonically with increasing the temperature. It is found that the high temperature mobility is not only governed by the polar optical phonon scattering but also the acoustic phonon (deformation potential and piezoelectric) and interface roughness scatterings play a role. There was no significant difference observed in μ_H for changing the atmospheric condition. The characteristic feature is observed in ns that it is almost constant up to around 540 K, and shows sudden increase at higher temperatures when measured in the vacuum, while it is almost constant measured in the air. The surface barrier lowering originated from the decomposition of the surface oxide layer on AlInN is proposed as the most probable mechanism for the increase in ns. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlInN/GaN heterostructure / 2DEG density / Surface barrier height |
Paper # | ED2011-79,CPM2011-128,LQE2011-102 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2011/11/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures |
Sub Title (in English) | |
Keyword(1) | AlInN/GaN heterostructure |
Keyword(2) | 2DEG density |
Keyword(3) | Surface barrier height |
1st Author's Name | Md. Tanvir HASAN |
1st Author's Affiliation | Department of Electrical and Electronics Engineering, University of Fukui() |
2nd Author's Name | Hirokuni TOKUDA |
2nd Author's Affiliation | Department of Electrical and Electronics Engineering, University of Fukui |
3rd Author's Name | Masaaki KUZUHARA |
3rd Author's Affiliation | Department of Electrical and Electronics Engineering, University of Fukui |
Date | 2011-11-17 |
Paper # | ED2011-79,CPM2011-128,LQE2011-102 |
Volume (vol) | vol.111 |
Number (no) | 291 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |