Presentation 2011-11-17
Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures
Md. Tanvir HASAN, Hirokuni TOKUDA, Masaaki KUZUHARA,
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Abstract(in English) This paper describes the temperature dependent two dimensional electron gas (2DEG) properties in AlInN/AlN/GaN heterostructures. Hall mobility (aH) and 2DEG density (n_s) have been measured from 77 up to 973 K, where the atmospheric condition is changed as measured in vacuum and air. The μ_H decreases monotonically with increasing the temperature. It is found that the high temperature mobility is not only governed by the polar optical phonon scattering but also the acoustic phonon (deformation potential and piezoelectric) and interface roughness scatterings play a role. There was no significant difference observed in μ_H for changing the atmospheric condition. The characteristic feature is observed in ns that it is almost constant up to around 540 K, and shows sudden increase at higher temperatures when measured in the vacuum, while it is almost constant measured in the air. The surface barrier lowering originated from the decomposition of the surface oxide layer on AlInN is proposed as the most probable mechanism for the increase in ns.
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Keyword(in English) AlInN/GaN heterostructure / 2DEG density / Surface barrier height
Paper # ED2011-79,CPM2011-128,LQE2011-102
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Committee CPM
Conference Date 2011/11/10(1days)
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Registration To Component Parts and Materials (CPM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures
Sub Title (in English)
Keyword(1) AlInN/GaN heterostructure
Keyword(2) 2DEG density
Keyword(3) Surface barrier height
1st Author's Name Md. Tanvir HASAN
1st Author's Affiliation Department of Electrical and Electronics Engineering, University of Fukui()
2nd Author's Name Hirokuni TOKUDA
2nd Author's Affiliation Department of Electrical and Electronics Engineering, University of Fukui
3rd Author's Name Masaaki KUZUHARA
3rd Author's Affiliation Department of Electrical and Electronics Engineering, University of Fukui
Date 2011-11-17
Paper # ED2011-79,CPM2011-128,LQE2011-102
Volume (vol) vol.111
Number (no) 291
Page pp.pp.-
#Pages 5
Date of Issue