| Presentation | 2011-11-17 Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control Hajime FUJIKURA, Yuichi OSHIMA, Takehiro YOSHIDA, Takeshi MEGRO, Toshiya SAITO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In the growth of freestanding GaN substrates using our void-assisted separation (VAS) method, we have effectively suppressed μm to mm-sized surface defects, which have been frequently reported in literatures. However, it was found that, without stress relaxation by such surface defects, reduction of dislocation density below mid-10^6/cm^2 became difficult due to generation of new dislocations through stress accumulation. This difficulty was overcome by controlling a seemingly intrinsic property, hardness, of the GaN crystal, leading to further reduction of the dislocation density down to 10^5/cm^2 range even in the growth of freestanding GaN substrates without the surface defects. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | freestanding GaN substrate / surface defect / dislocation density / nano-indentation / hardness |
| Paper # | ED2011-77,CPM2011-126,LQE2011-100 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control |
| Sub Title (in English) | |
| Keyword(1) | freestanding GaN substrate |
| Keyword(2) | surface defect |
| Keyword(3) | dislocation density |
| Keyword(4) | nano-indentation |
| Keyword(5) | hardness |
| 1st Author's Name | Hajime FUJIKURA |
| 1st Author's Affiliation | Compound Semiconductor Production Division, Hitachi-Cable, Ltd.() |
| 2nd Author's Name | Yuichi OSHIMA |
| 2nd Author's Affiliation | Advanced Electronic Materials Research Department, R&D Laboratory, Hitachi-Cable, Ltd. |
| 3rd Author's Name | Takehiro YOSHIDA |
| 3rd Author's Affiliation | Advanced Electronic Materials Research Department, R&D Laboratory, Hitachi-Cable, Ltd. |
| 4th Author's Name | Takeshi MEGRO |
| 4th Author's Affiliation | Compound Semiconductor Production Division, Hitachi-Cable, Ltd. |
| 5th Author's Name | Toshiya SAITO |
| 5th Author's Affiliation | Compound Semiconductor Production Division, Hitachi-Cable, Ltd. |
| Date | 2011-11-17 |
| Paper # | ED2011-77,CPM2011-126,LQE2011-100 |
| Volume (vol) | vol.111 |
| Number (no) | 291 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |