| Presentation | 2011-11-17 Decreasing Dislocation Density of MOCVD-GaN Using Silicon Dioxide Mask Masaru TANIMOTO, Shiro SAKAI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Epitaxial Lateral Overgrowth (ELO) is done for GaN with a cross-hatch pattemed-SiO_2. The easier plane for the re-growth of GaN is a GaN (0001) plane, and that the non-easy plane is for GaN is other planes of GaN and sapphire. By just increase of etching time of SiO_2, the easier re-growth plane of GaN is nucleated on the 0.5 μm-thick-GaN. The etch pit density of 2.1×10^7cm^<-2> is obtained, while the normal GaN shows 3.0×10^8cm^<-2>. The Shottky barrier is fabricated, and the best one seems the saturation current is the lowest. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Dislocation Density / etching |
| Paper # | ED2011-76,CPM2011-125,LQE2011-99 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Decreasing Dislocation Density of MOCVD-GaN Using Silicon Dioxide Mask |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Dislocation Density |
| Keyword(3) | etching |
| 1st Author's Name | Masaru TANIMOTO |
| 1st Author's Affiliation | Faculty of Engineering, The University of Tokushima() |
| 2nd Author's Name | Shiro SAKAI |
| 2nd Author's Affiliation | Faculty of Engineering, The University of Tokushima |
| Date | 2011-11-17 |
| Paper # | ED2011-76,CPM2011-125,LQE2011-99 |
| Volume (vol) | vol.111 |
| Number (no) | 291 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |