| Presentation | 2011-11-17 Control of interlayer on MOVPE growth of AlN on sapphire substrate Reina MIYAGAWA, Shibo YANG, Hideto MIYAKE, Kazumasa HIRAMATSU, Takaaki KUWAHARA, Masatoshi MITSUHARA, Noriyuki KUWANO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The strong demands for high-efficiency light-emitting diodes and for high-sensitivity sensors in the deep-ultraviolet (UV) region has led to renewed interest in the growth of high-quality AlN. We have studied growth of high-quality AlN with a nucleation layer method. The growth conditions of a medium-temperature (MT-) AlN nucleation layer were examined the interface of the AlN and sapphire substrate. AlN layer with a highly crystalline quality of small tilting and twisting was obtained when the growth temperature of MT-AlN was 1250℃; however, the surface of AlN was rough because of the mixture of crystallographic polarity. On the other hand, for an AlN layer on the MT-AlN grown at 1100℃, both the tilt and surface morphology improved, although a future challenge is to reduce twist, but the was not much reduced. For further high-crystalline AlN growth, effects of the carrier gas ratio and growth temperature are examined with the aim of optimizing the growth conditions of high-temperature (HT-) AlN. As a result, with increasing ratio of N_2 in the carrier gas, the radius of curvature of the AlN layer increased and the compressive strain decreased. The reduction of compressive strain and increase in curvature of the AlN layer were due to an increase in the number of dislocations. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlN / MOVPE / sapphire / interlayer |
| Paper # | ED2011-74,CPM2011-123,LQE2011-97 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of interlayer on MOVPE growth of AlN on sapphire substrate |
| Sub Title (in English) | |
| Keyword(1) | AlN |
| Keyword(2) | MOVPE |
| Keyword(3) | sapphire |
| Keyword(4) | interlayer |
| 1st Author's Name | Reina MIYAGAWA |
| 1st Author's Affiliation | Department, Mie University() |
| 2nd Author's Name | Shibo YANG |
| 2nd Author's Affiliation | Department, Mie University |
| 3rd Author's Name | Hideto MIYAKE |
| 3rd Author's Affiliation | Department, Mie University |
| 4th Author's Name | Kazumasa HIRAMATSU |
| 4th Author's Affiliation | Department, Mie University |
| 5th Author's Name | Takaaki KUWAHARA |
| 5th Author's Affiliation | Department of Applied Science for Electronics and Materials, Kyushu University |
| 6th Author's Name | Masatoshi MITSUHARA |
| 6th Author's Affiliation | Department of Applied Science for Electronics and Materials, Kyushu University |
| 7th Author's Name | Noriyuki KUWANO |
| 7th Author's Affiliation | Art, Science and Technology Center for Cooperative Research, Kyushu University |
| Date | 2011-11-17 |
| Paper # | ED2011-74,CPM2011-123,LQE2011-97 |
| Volume (vol) | vol.111 |
| Number (no) | 291 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |