| Presentation | 2011-11-17 AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy Ryosuke KIKUCHI, Hironori OKUMURA, Tsunenobu KIMOTO, Jun SUDA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently, we have successfully reduced the threading dislocation density in AlN layer on SiC substrates to 10^8 cm^<-2> by controlling the step heights of the SiC substrates, Ga pre-deposition and avoiding unintentional active-nitrogen exposure prior to AlN growth. In this study, we report the growth of AlN/GaN short-period superlattice (SPSL) on SiC by applying the high-quality AlN growth process. We demonstrate coherent growth of AlN/GaN SPSL on SiC substrates. Thicknesses of AlN and GaN in the SPSL were 12 bilayer (BL) and 2 BL, respectively. The FWHM values of main peak for the AlN/GaN SPSL were 34.2 arcsec for the (0002) ω-scan and 37.9 arcsec for the (10-12) ω-scan. A RSM near (1 1 -2 12) reflection of 6H-SiC clearly indicates that AlN/GaN SPSL was coherently grown on 6H-SiC. The very small FHWM values reflect coherent growth of AlN/GaN SPSL on 6H-SiC substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlN / GaN / Short-period superlattice / Molecular-beam epitaxy / Coherent growth |
| Paper # | ED2011-73,CPM2011-122,LQE2011-96 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy |
| Sub Title (in English) | |
| Keyword(1) | AlN |
| Keyword(2) | GaN |
| Keyword(3) | Short-period superlattice |
| Keyword(4) | Molecular-beam epitaxy |
| Keyword(5) | Coherent growth |
| 1st Author's Name | Ryosuke KIKUCHI |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Hironori OKUMURA |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Tsunenobu KIMOTO |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | Jun SUDA |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 2011-11-17 |
| Paper # | ED2011-73,CPM2011-122,LQE2011-96 |
| Volume (vol) | vol.111 |
| Number (no) | 291 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |