| Presentation | 2011-10-21 Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching Koji ERIGUCHI, Yoshinori NAKAKUBO, Asahiko MATSUDA, Yoshinori TAKAO, Kouichi ONO, |
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| Abstract(in Japanese) | (See Japanese page) | ||
| Abstract(in English) | We investigated the effects of plasma process-induced physical damage (bombardment of ions) on MOSFET performance degradation. We focus on "Si recess" in the source / drain extension region - Si loss by a subsequent wet-etch of the damaged-layer formed during plasma etch processes. We present a model describing the relationship between the energy of incident ion, Si recess depth d_R, and the threshold voltage shift ΔV_ | of MOSFET. Based on the analytic model, we then propose a unified framework for predicting the MOSFET parameter fluctuation induced by the plasma process damage. The model prediction suggests an increase in ΔV_ | -variation by Si recess structure (d_R). We also estimate an enhancement of the subthreshold leakage-current fluctuation by the Si recess structure. |
| Keyword(in Japanese) | (See Japanese page) | ||
| Keyword(in English) | Plasma-Induced Damage / Si recess / Threshold Voltage Shift / Subthreshold Leakage / Parameter Fluctuation | ||
| Paper # | SDM2011-110 | ||
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2011/10/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching |
| Sub Title (in English) | |
| Keyword(1) | Plasma-Induced Damage |
| Keyword(2) | Si recess |
| Keyword(3) | Threshold Voltage Shift |
| Keyword(4) | Subthreshold Leakage |
| Keyword(5) | Parameter Fluctuation |
| 1st Author's Name | Koji ERIGUCHI |
| 1st Author's Affiliation | Kyoto University() |
| 2nd Author's Name | Yoshinori NAKAKUBO |
| 2nd Author's Affiliation | Kyoto University |
| 3rd Author's Name | Asahiko MATSUDA |
| 3rd Author's Affiliation | Kyoto University |
| 4th Author's Name | Yoshinori TAKAO |
| 4th Author's Affiliation | Kyoto University |
| 5th Author's Name | Kouichi ONO |
| 5th Author's Affiliation | Kyoto University |
| Date | 2011-10-21 |
| Paper # | SDM2011-110 |
| Volume (vol) | vol.111 |
| Number (no) | 249 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |