Presentation 2011-10-20
C-Band High-Efficiency AlGaN/GaN HEMT Power Amplifier by Controlling Phase Angle of up to 4th Harmonics
Masahiro KAMIYAMA, Ryo ISHIKAWA, Kazuhiko HONJO,
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Abstract(in English) A high-efficiency AlGaN/GaN HEMT power amplifier at C-band has been developed by controlling the phase angles of harmonics up to the fourth order. Through this controlling, the phase angle between voltage and current harmonic waves at a transistor output node is set to be 90 or -90 degrees for each harmonic, in order to remove average power consumption at the transistor. The phase angle control circuit was designed using microstrip transmission lines made on a low-loss alumina ceramics substrate. The fabricated AlGaN/GaN HEMT amplifier delivered a maximum power-added efficiency of 79.5% and a maximum drain efficiency of 90.7% at 5.65 GHz, and the saturated output power was 33.3 dBm.
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Keyword(in English) microwave / power amplifier / C-band high efficiency / harmonic phase angles control
Paper # MW2011-89
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Committee MW
Conference Date 2011/10/13(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) C-Band High-Efficiency AlGaN/GaN HEMT Power Amplifier by Controlling Phase Angle of up to 4th Harmonics
Sub Title (in English)
Keyword(1) microwave
Keyword(2) power amplifier
Keyword(3) C-band high efficiency
Keyword(4) harmonic phase angles control
1st Author's Name Masahiro KAMIYAMA
1st Author's Affiliation The University of Electro-Communications()
2nd Author's Name Ryo ISHIKAWA
2nd Author's Affiliation The University of Electro-Communications
3rd Author's Name Kazuhiko HONJO
3rd Author's Affiliation The University of Electro-Communications
Date 2011-10-20
Paper # MW2011-89
Volume (vol) vol.111
Number (no) 250
Page pp.pp.-
#Pages 6
Date of Issue