Presentation 2011-10-20
X-Band 120W internally matched GaN Amplifier in small package
Hiroaki MAEHARA, Hiromitsu UCHIDA, Hiromitsu UTSUMI, Jun NISHIHARA, Hiroshi OTSUKA, Koji YAMANAKA, Masatoshi NAKAYAMA,
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Abstract(in English) In this paper, a small package internally matched GaN HEMT high power amplifier operating at X-band is presented. Radar applications of GaN-HPA are expected to be small size and high output performance in terms of miniaturization Transmitter Module. Thus, by employing Er=90 substrate, circuit size is drastically reduced. Moreover, operating drain voltage is optimized considering power density degradation due to self-heating. Finally, 120W output power is obtained from a 12.9mmx 21mm package internally matched GaN HEMT amplifier at 9.6GHz.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) internally matched amplifier / X-band / small package
Paper # MW2011-85
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Committee MW
Conference Date 2011/10/13(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) X-Band 120W internally matched GaN Amplifier in small package
Sub Title (in English)
Keyword(1) internally matched amplifier
Keyword(2) X-band
Keyword(3) small package
1st Author's Name Hiroaki MAEHARA
1st Author's Affiliation Mitsubishi Electric Corporation()
2nd Author's Name Hiromitsu UCHIDA
2nd Author's Affiliation Mitsubishi Electric Corporation
3rd Author's Name Hiromitsu UTSUMI
3rd Author's Affiliation Mitsubishi Electric Corporation
4th Author's Name Jun NISHIHARA
4th Author's Affiliation Mitsubishi Electric Corporation
5th Author's Name Hiroshi OTSUKA
5th Author's Affiliation Mitsubishi Electric Corporation
6th Author's Name Koji YAMANAKA
6th Author's Affiliation Mitsubishi Electric Corporation
7th Author's Name Masatoshi NAKAYAMA
7th Author's Affiliation Mitsubishi Electric Corporation
Date 2011-10-20
Paper # MW2011-85
Volume (vol) vol.111
Number (no) 250
Page pp.pp.-
#Pages 5
Date of Issue