| Presentation | 2011-10-26 Formation of NiSi silicide and its application to Cu contacts Mayumi B. TAKEYAMA, Masaru SATO, Atsushi NOYA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Monosilicide of NiSi is attractive due to its low resistivity, phase stability up to at 750℃, the phase transition point to NiSi_2, and smaller Si consumption during silicidation reaction than those of disilicides. In this study, we have proposed and examined an increased transition temperature from NiSi to NiSia by controlling the texture of NiSi. As a result, by choosing the reaction temperature of 380℃, close to 350℃ the formation temperature of NiSi, we can obtain a uniform NiSi film with decreased crystalline grains. In such a film, the NiSi phase is still stable at the temperature of 750℃. It is revealed that the nanocrystalline texture of NiSi is effective for improving the stability of the NiSi phase. The degradation process of the Cu/NiSi/Si contact is examined for the application of Cu plugs in the contacts. The Cu diffusion into the NiSi layer starts at 350℃ forming Cu-silicides. This solid-phase reaction leads to the degradation of the contact. The use of a barrier layer is suggestive between Cu and NiSi. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu plug / Ni-silicides / low resistivity / phase transition / front end |
| Paper # | CPM2011-117 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/10/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of NiSi silicide and its application to Cu contacts |
| Sub Title (in English) | |
| Keyword(1) | Cu plug |
| Keyword(2) | Ni-silicides |
| Keyword(3) | low resistivity |
| Keyword(4) | phase transition |
| Keyword(5) | front end |
| 1st Author's Name | Mayumi B. TAKEYAMA |
| 1st Author's Affiliation | Faculty of Engineering, Kitami institute of technology() |
| 2nd Author's Name | Masaru SATO |
| 2nd Author's Affiliation | Faculty of Engineering, Kitami institute of technology |
| 3rd Author's Name | Atsushi NOYA |
| 3rd Author's Affiliation | Faculty of Engineering, Kitami institute of technology |
| Date | 2011-10-26 |
| Paper # | CPM2011-117 |
| Volume (vol) | vol.111 |
| Number (no) | 264 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |