| Presentation | 2011-10-12 Improvement in Electrical Characteristics of NbN tunnel Junctions With Plasma-Nitrided AlNx Barriers Tatsunori FUNAI, Naoto NAITO, Hiroyuki AKAIKE, Akira FUJIMAKI, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We present the fabrication process of NbN tunnel junctions with plasma-nitrided AlNx barriers and the electrical characteristics of the junctions. The application of the junctions to high frequency electromagnetic wave detectors requires increase in the critical current density J_c and the gap voltage V_g of the junctions. In this work, we examined the conditions of depositing a counter NbN layer and forming an AINx barrier for the purpose of improving the characteristics of the junctions. As a result, the V_g was increased by 0.4 mV to 5.0 mV by adjusting the deposition conditions and by raising the substrate temperature during deposition of the counter NbN layer. On the other hand, the J_c up to 10.2 kA/cm^2 was obtained by changing the RF power density for nitriding an Al layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Plasma-Nitridation / AlNx / NbN |
| Paper # | SCE2011-15 |
| Date of Issue |
| Conference Information | |
| Committee | SCE |
|---|---|
| Conference Date | 2011/10/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Superconductive Electronics (SCE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement in Electrical Characteristics of NbN tunnel Junctions With Plasma-Nitrided AlNx Barriers |
| Sub Title (in English) | |
| Keyword(1) | Plasma-Nitridation |
| Keyword(2) | AlNx |
| Keyword(3) | NbN |
| 1st Author's Name | Tatsunori FUNAI |
| 1st Author's Affiliation | Department of Quamtum Engineering, Nagoya University() |
| 2nd Author's Name | Naoto NAITO |
| 2nd Author's Affiliation | Department of Quamtum Engineering, Nagoya University |
| 3rd Author's Name | Hiroyuki AKAIKE |
| 3rd Author's Affiliation | Department of Quamtum Engineering, Nagoya University |
| 4th Author's Name | Akira FUJIMAKI |
| 4th Author's Affiliation | Department of Quamtum Engineering, Nagoya University |
| Date | 2011-10-12 |
| Paper # | SCE2011-15 |
| Volume (vol) | vol.111 |
| Number (no) | 230 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |