Presentation 2011-08-26
Fabrication of highly stacked InGaAs/GaAs quantum dot laser diode for 1-μm photonic waveband with ultrahigh rate MBE growth technique
Fumihiko TANOUE, Hiroharu SUGAWARA, Kouichi AKAHANE, Naokatsu YAMAMOTO,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) 1-μm photonic waveband is promising with various applications such as optical communication and ultrahigh-resolution optical coherence tomography. To produce high-performance quantum dot (QD) lasers, higher surface density and higher stacking are required. However, it was reported that stacking more than 10 layers with conventional MBE technique often induce dislocation, and result in weaker photoluminescence. Therefore, many QD lasers are composed less than 10 layers. In this paper, the ultrahigh rate MBE growth technique was utilized to fabricate 19-stacking InGaAs QD laser and lasing at 1-μm photonic wave was demonstrated. 19-stacking laser showed lower threshold current and higher internal quantum efficiency than 7-stacking laser.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaAs Quantum Dot / Quantum Dot Laser / Molecular Beam Epitaxy
Paper # EMD2011-54,CPM2011-98,OPE2011-89,LQE2011-52
Date of Issue

Conference Information
Committee LQE
Conference Date 2011/8/18(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of highly stacked InGaAs/GaAs quantum dot laser diode for 1-μm photonic waveband with ultrahigh rate MBE growth technique
Sub Title (in English)
Keyword(1) InGaAs Quantum Dot
Keyword(2) Quantum Dot Laser
Keyword(3) Molecular Beam Epitaxy
1st Author's Name Fumihiko TANOUE
1st Author's Affiliation Graduate School of System Design, Tokyo Metropolitan University:National Institute of Information and Communications Technology()
2nd Author's Name Hiroharu SUGAWARA
2nd Author's Affiliation Graduate School of System Design, Tokyo Metropolitan University
3rd Author's Name Kouichi AKAHANE
3rd Author's Affiliation National Institute of Information and Communications Technology
4th Author's Name Naokatsu YAMAMOTO
4th Author's Affiliation National Institute of Information and Communications Technology
Date 2011-08-26
Paper # EMD2011-54,CPM2011-98,OPE2011-89,LQE2011-52
Volume (vol) vol.111
Number (no) 186
Page pp.pp.-
#Pages 4
Date of Issue